M12L128168A-7TG2S

The M12L128168A-7TG2S is a synchronous high data rate DRAM organized as 134,217,728 bits (134.2 Mbit) configured as 4 × 2,097,152 words by 16 bits. This JEDEC-standard 3.3 V SDRAM implements a four-bank architecture and synchronous clocked operation to support high-bandwidth, high-performance memory system applications.

With a maximum frequency rating of 143 MHz for this ordering code, programmable burst lengths and latencies, and a surface-mount 54-pin TSOP II package, the device is intended for designs that require controlled-cycle timing, flexible data burst options, and documented DRAM operation modes.

Key Features

• Memory Organization — 134,217,728 bits organized as 4 × 2,097,152 words by 16 bits (2M × 16 × 4 banks), supporting parallel data transfers across 16 DQ lines.
• Clock & Performance — Rated for 143 MHz operation for this part number; all inputs are sampled on the positive edge of the system clock to permit precise synchronous control.
• Latency & Burst Control — Supports CAS latency 2 and 3, with programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) to match system timing requirements.
• Timing — Specified access time of 6 ns and write cycle time (word/page) of 14 ns for timing-critical designs.
• Refresh & Power — Auto and self-refresh supported; 64 ms refresh period (4K cycle). JEDEC standard 3.3 V supply with operating voltage range 3.0 V to 3.6 V.
• Interface & Signal Control — Parallel memory interface with LVTTL-compatible multiplexed address, support for DQM data masking, CS/CKE control, RAS/CAS/WE command signaling, and separate VDDQ/VSSQ for output buffer power isolation.
• Package & Mounting — Surface-mount 54-pin TSOP II (54-TSOP II) package; supplier device package labeled 54-TSOPII.
• Qualification & Environmental — JEDEC qualification with commercial grade operation and RoHS-compliant status; operating temperature range 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory subsystems — Use where synchronous, clocked DRAM access and four-bank operation are required for sustained data throughput.
• Performance-oriented embedded systems — Suited to designs needing programmable burst lengths and CAS latency options to tune memory timing.
• Board-level SDRAM implementations — Ideal for designs that require a JEDEC-standard 3.3 V SDRAM in a compact 54-TSOP II surface-mount package.

Unique Advantages

• Flexible timing and burst modes — Programmable CAS latencies and multiple burst length/type options enable designers to match memory behavior to system timing and throughput needs.
• Four-bank architecture — Banked memory organization increases effective concurrency for read/write sequences in high-throughput applications.
• Isolated output power — Separate VDDQ/VSSQ pins for output buffers provide improved noise immunity for cleaner signal integrity on DQ lines.
• JEDEC-standard supply and operation — 3.3 V JEDEC compliance simplifies system-level power design and interoperability with standard SDRAM controllers.
• Compact surface-mount package — 54-pin TSOP II delivers a small board footprint for space-constrained PCBs while retaining full parallel interface capability.
• Documented refresh and power modes — Auto/self-refresh and a specified 64 ms refresh period support stable operation across typical duty cycles.

Why Choose M12L128168A-7TG2S?

The M12L128168A-7TG2S provides a documented, JEDEC-standard synchronous DRAM solution for systems that demand deterministic clocked memory access, flexible burst behavior, and banked memory organization. With a 143 MHz rating for this part number, support for CAS latency 2/3, and a range of burst options, the device is positioned for designs where timing control and throughput tuning are important.

Engineers specifying the M12L128168A-7TG2S gain a compact 54-TSOP II surface-mount package, separate output power rails for signal integrity, and RoHS compliance—attributes that simplify board-level integration for a variety of high-performance memory subsystems.

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