M12L128168A-6TG2S

The M12L128168A-6TG2S is a synchronous high-data-rate DRAM device from ESMT organized as 4 × 2,097,152 words by 16 bits (134,217,728 bits). It implements a four-bank SDRAM architecture with a 3.3V JEDEC-standard supply and is specified for 166 MHz operation.

Designed for high-bandwidth, high-performance memory system applications, this device provides programmable burst lengths and latencies, standard SDRAM control signals, and industry-standard packaging to support embedded and board-level memory designs.

Key Features

• Memory Organization: 4 × 2,097,152 × 16-bit architecture (134,217,728 bits) for parallel SDRAM systems.
• Clock and Timing: Specified for 166 MHz operation with an access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
• JEDEC 3.3V Supply: Standard 3.3V power supply (operating range 3.0 V to 3.6 V) compatible with LVTTL signaling for multiplexed address operation.
• Programmable Latency & Burst: Supports CAS latency 2 and 3, burst lengths 1/2/4/8/full page, and sequential or interleave burst types for flexible throughput tuning.
• Four-Bank Operation: Independent bank addressing (BA0/BA1) enables efficient row/column access and concurrency within the device.
• Refresh and Power Management: Auto and self refresh support with a 64 ms refresh period (4K cycle); CKE input for clock enable and power-down control.
• Data Masking and I/O: L(U)DQM for data input/output masking and Hi-Z output control; isolated VDDQ/VSSQ for output buffer power and noise immunity.
• Package and Mounting: 54-pin TSOP II surface-mount package (54-TSOP II) suitable for board-level integration; commercial grade operation from 0 °C to 70 °C.
• Standards & Compliance: JEDEC-qualified SDRAM architecture and RoHS-compliant supply chain status.

Typical Applications

• High-bandwidth memory subsystems: Used where synchronous, paged access and programmable burst modes are required to match system timing and throughput.
• Embedded system memory: Provides parallel SDRAM storage for embedded controllers and processors that use standard SDRAM interfaces.
• Board-level DRAM expansion: Surface-mount TSOP II packaging and standard control signals simplify integration into memory expansion designs and modules.

Unique Advantages

• Flexible timing configuration: CAS latency options (2 & 3) and multiple burst lengths allow designers to balance latency and throughput for specific system requirements.
• Four-bank architecture: Enables concurrent row management and improved command efficiency across banked memory resources.
• JEDEC 3.3V compatibility: Standard voltage range (3.0 V–3.6 V) and LVTTL-compatible inputs simplify interfacing with common system logic levels.
• Isolated I/O power rails: Separate VDDQ/VSSQ for output buffers improves noise tolerance on data lines and helps maintain signal integrity.
• Industry-standard packaging: 54-TSOP II surface-mount package supports existing board layouts and manufacturing processes for compact memory implementations.
• RoHS-compliant manufacturing: Environmentally compliant supply status supports regulatory needs for lead-free production.

Why Choose M12L128168A-6TG2S?

The M12L128168A-6TG2S offers a JEDEC-standard synchronous DRAM solution with a four-bank, 2M×16 organization and 166 MHz operation—making it a solid choice for designs that require predictable, programmable SDRAM performance. Its combination of programmable latencies, burst modes, and isolated I/O power rails provides practical flexibility for system-level timing and signal integrity challenges.

Ideal for engineers implementing board-level memory and embedded system storage, this device delivers verifiable specifications and standard packaging to support efficient integration and long-term availability from ESMT.

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