M12L128324A-6BG2C

The M12L128324A-6BG2C is a synchronous DRAM device organized as 4 × 1,048,576 words by 32 bits (134,217,728 bits). It implements four-bank operation and supports synchronous high-data-rate operation up to 166 MHz with JEDEC-standard 3.3V supply compatibility.

Designed for high-bandwidth, high-performance memory-system applications, this commercial-grade SDRAM provides programmable burst lengths, selectable CAS latencies, and standard refresh modes for deterministic, clock-synchronized memory access in compact surface-mount packages.

Key Features

• Memory Organization — 1M × 32 word organization with four internal banks (4 × 1,048,576 × 32) to support concurrent bank operations and higher effective throughput.
• Synchronous DRAM Architecture — All inputs are sampled on the positive edge of the system clock; supports CAS latency 2 or 3 and programmable burst lengths (1, 2, 4, 8, full page) with sequential and interleave burst types.
• Performance — Rated for operation at 166 MHz with a typical access time of 5.4 ns and write cycle time (word/page) of 12 ns, enabling predictable, clock-aligned transfers.
• Power and Interface — JEDEC standard 3.3V nominal supply (operating range 3.0 V to 3.6 V) with LVTTL-compatible multiplexed address inputs and parallel data interface (DQM for masking).
• Refresh and Reliability Features — Auto and self-refresh supported with a 64 ms refresh period (4K cycles) to maintain data integrity in volatile memory.
• Package and Mounting — Pb‑free 90‑ball FBGA surface-mount package (BGA90, 8 mm × 13 mm × 1 mm body, 0.8 mm ball pitch) for compact board integration.
• Operating Range and Qualification — Commercial grade with operating temperature 0 °C to 70 °C and JEDEC qualification; RoHS compliant.

Typical Applications

• High‑performance memory subsystems — Suited for systems requiring synchronous, clocked DRAM with programmable burst and latency options to match system timing and throughput needs.
• Embedded system memory — Compact 90‑FBGA surface‑mount package and standard 3.3V interface enable integration into space‑constrained embedded designs.
• Data buffering and caching — Four‑bank organization and DQM masking support efficient read/write buffering and page operations in high‑bandwidth designs.

Unique Advantages

• Synchronous, clock‑aligned operation — Positive‑edge sampling of inputs and selectable CAS latency provide deterministic timing for system designers.
• Flexible burst and bank control — Programmable burst lengths and four banks allow tailoring of access patterns for throughput and latency trade-offs.
• JEDEC 3.3V compatibility — Standard voltage range (3.0 V to 3.6 V) simplifies integration with common system power rails and logic levels.
• Compact FBGA footprint — 90‑ball FBGA (8×13×1 mm) enables high density board layouts while maintaining robust ball‑grid interconnect.
• Commercial qualification and compliance — JEDEC qualification and RoHS compliance provide clarity for procurement and regulatory requirements in commercial products.

Why Choose M12L128324A-6BG2C?

The M12L128324A-6BG2C delivers a synchronous, JEDEC‑compliant SDRAM option that balances performance and compactness for high‑bandwidth memory designs. With a 1M×32 organization across four banks, programmable burst modes and latencies, and operation at up to 166 MHz, it is positioned for designers who need deterministic clocked memory behavior in a surface‑mount FBGA package.

This device is appropriate for commercial systems requiring standard 3.3V operation, straightforward board integration, and JEDEC qualification. Its combination of synchronous features, refresh support, and compact packaging offers a stable, verifiable memory element for scalable memory subsystems.

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