M12L16161A-7T(2R)
| Part Description |
Ind. -40~85°C, SDRAM, 3.3V |
|---|---|
| Quantity | 1,530 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 50PIN TSOP | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 16 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 14 ns | Packaging | 50PIN TSOP | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M12L16161A-7T(2R) – Ind. -40~85°C, SDRAM, 3.3V
The M12L16161A-7T(2R) from ESMT is an industrial-grade synchronous DRAM (SDRAM) device organized as 2 × 524,288 words by 16 bits (1M × 16 total) for a storage capacity of 16,777,216 bits. Designed for synchronous, high-data-rate memory subsystems, the device supports JEDEC-standard operation and an industrial operating temperature range of -40 °C to 85 °C.
This SDRAM provides programmable burst lengths and latencies, dual-bank operation and synchronous clocked I/O suitable for high-bandwidth memory system applications where deterministic timing and JEDEC compatibility are required.
Key Features
- Density & Organization — 16,777,216 bits total, organized as 2 × 524,288 × 16-bit (1M × 16) for straightforward parallel data paths.
- Synchronous DRAM Architecture — Synchronous design with all inputs sampled on the positive edge of the system clock for precise cycle control and predictable timing.
- Performance — Rated clock frequency 143 MHz and access time as low as 5 ns; write cycle time (word/page) of 14 ns supports high-throughput operation.
- JEDEC Compatibility — JEDEC standard 3.3V power supply and LVTTL-compatible inputs as documented in the product datasheet.
- Flexible Burst and Timing — Supports CAS latency options (2 and 3), burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) for adaptable memory transfer patterns.
- Dual-Bank Operation & Refresh — Dual-bank architecture with auto and self-refresh support and a 32 ms refresh period (2K cycle) for reliable DRAM maintenance.
- Data Mask & Control — DQM for data masking and burst read single-bit write operation; supports MRS cycle programming for mode settings.
- Industrial Grade & Packaging — Industrial temperature range (-40 °C to 85 °C) and available in a 50-pin TSOP (surface-mount) package suitable for compact board layouts.
- Compliance — RoHS compliant.
Typical Applications
- Industrial Embedded Systems — Provides deterministic synchronous memory for industrial controllers and embedded platforms operating across -40 °C to 85 °C.
- High-Bandwidth Memory Subsystems — Suitable for memory subsystems that require programmable burst lengths, CAS latency options and dual-bank operation.
- Industrial Networking & Communications — Can be used where JEDEC-compatible SDRAM is required for buffering and high-throughput data handling in industrial communications equipment.
Unique Advantages
- Industrial Temperature Range — Rated from -40 °C to 85 °C, enabling deployment in harsh or temperature-variable environments.
- JEDEC-Standard Interface — JEDEC 3.3V supply and LVTTL-compatible inputs simplify system integration with standard memory controllers.
- Flexible Performance Tuning — Multiple CAS latency and burst-length options let designers tune throughput and latency to application needs.
- Dual-Bank Efficiency — Dual-bank organization allows more efficient command and access patterns for higher sustained throughput in multi-access scenarios.
- Compact Surface-Mount Package — 50-pin TSOP surface-mount package supports dense board layouts while providing a full parallel memory interface.
- Regulatory and Environmental Compliance — RoHS compliant for environmental and manufacturing requirements.
Why Choose M12L16161A-7T(2R)?
The M12L16161A-7T(2R) delivers a balance of synchronous performance, JEDEC-standard interoperability and industrial temperature resilience for memory subsystem designers. Its 16,777,216-bit capacity, 1M × 16 organization and 143 MHz rated clock frequency make it suitable for high-bandwidth designs that require predictable, clock-synchronous behavior.
Manufactured by ESMT and offered in a compact 50-pin TSOP surface-mount package, this SDRAM is positioned for applications where JEDEC compatibility, flexible burst/timing configuration and industrial-grade operation are priorities—providing a robust memory building block for long-term designs.
If you would like pricing, availability or to request a quote for the M12L16161A-7T(2R), please submit an inquiry or request a formal quote through your procurement channel. Technical datasheet details are available from the manufacturer for further integration and validation.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A