M12L2561616A-5B(2T)

The M12L2561616A-5B(2T) from ESMT is a synchronous DRAM device providing 268,435,456 bits of volatile memory organized as 16M × 16 with four internal banks. Its synchronous design and clocked I/O enable deterministic cycle control for high-bandwidth, high-performance memory system applications.

With support for programmable burst lengths and CAS latencies, plus operation to 200 MHz and fast access timings, this SDRAM targets designs that require configurable throughput and reliable refresh management in commercial-temperature environments.

Key Features

• Memory Organization 
  268,435,456 bits arranged as 4 × 4,194,304 words by 16 bits (16M × 16) with four-bank operation for concurrent bank accesses.
• Performance 
  Rated up to 200 MHz system clock with typical access time of 5 ns and write cycle time (word/page) of 10 ns for responsive memory transactions.
• Burst and Latency Options 
  Programmable burst lengths (1, 2, 4, 8 and full page) and CAS Latency options of 2 and 3 to match system timing and throughput needs.
• Interface and Signalling 
  Parallel memory interface with LVTTL-compatible multiplexed address inputs; all inputs sampled on the positive edge of the system clock.
• Refresh and Power Management 
  Auto and self-refresh support with a 64 ms refresh period (8K refresh cycles); CKE and power-down control for clock gating.
• Package and Mounting 
  Available in 54-pin TSOP II and 54-ball FBGA packages; surface-mount mounting for compact board-level integration.
• Qualification & Temperature 
  JEDEC-qualified commercial-grade device with an operating temperature range of 0°C to 70°C.
• Environmental Compliance 
  All Pb-free products are RoHS compliant.

Unique Advantages

• Configurable Timing 
  CAS latency and burst-length programmability allow tailoring of memory behavior to application-level access patterns.
• High Data-Rate Support 
  Operation up to 200 MHz enables higher sustained data throughput for performance-sensitive designs.
• Four-Bank Architecture 
  Multiple internal banks improve effective concurrency for interleaved read/write operations.
• Standard Compliance 
  JEDEC standard power and signaling simplify integration into existing memory system designs.
• Flexible Packaging 
  Choice of TSOP II or BGA package styles supports diverse board layouts and assembly processes.
• Commercial-Grade Reliability 
  Designed for 0°C to 70°C operation and RoHS-compliant manufacturing.

Why Choose M12L2561616A-5B(2T)?

The M12L2561616A-5B(2T) balances configurable performance and industry-standard operation for designers building high-bandwidth memory subsystems. Its synchronous architecture, four-bank organization and programmable burst/latency options make it suitable for systems that require deterministic timing and adaptable throughput.

Backed by ESMT's JEDEC-qualified SDRAM family and available in multiple surface-mount packages, this part is suitable for commercial designs that need scalable memory density, packaged flexibility, and standard-compliant integration.

Request a quote or submit a technical inquiry to evaluate the M12L2561616A-5B(2T) for your next memory design.