M12L2561616A-5BG2T

The M12L2561616A-5BG2T is a synchronous high‑data‑rate Dynamic RAM organized as 4 × 4,194,304 words by 16 bits (268,435,456 bits). It implements a synchronous DRAM architecture with four banks and supports programmable burst lengths and CAS latencies for flexible memory timing.

Designed for high‑bandwidth, high‑performance memory system applications, this device provides precise cycle control through system clock sampling and supports surface‑mount 54‑ball BGA packaging for compact board‑level integration.

Key Features

• Memory Core & Organization 268,435,456‑bit capacity organized as 4M × 16 with four banks to support interleaved and burst operations.
• Synchronous Operation & Timing Synchronous DRAM with inputs sampled on the positive edge of the system clock; supports CAS Latency 2 and 3, programmable burst length (1, 2, 4, 8, full page) and burst type (sequential & interleave).
• Performance Maximum frequency 200 MHz, typical access time 4.5 ns and write cycle time (word/page) of 10 ns.
• Interface & Signaling Parallel memory interface with LVTTL compatible multiplexed address and DQM for data masking; supports burst read single write operation.
• Power & Refresh JEDEC standard 3.3V supply (operating range 3.0V–3.6V); supports auto and self refresh with a 64 ms refresh period (8K cycles).
• Package & Mounting 54‑ball BGA (BGA54) surface‑mount package; ball pitch 0.8 mm, body 8 mm × 8 mm × 1 mm for compact layout.
• Compliance & Grade JEDEC qualification, commercial grade operation 0 °C to 70 °C, and RoHS‑compliant / Pb‑free product.

Typical Applications

• High‑bandwidth memory subsystems — Useful where synchronous high‑data‑rate DRAM is required to support burst transfers and programmable latencies.
• High‑performance memory system designs — Suited to systems that benefit from precise cycle control using a system clock and four‑bank operation.
• Compact board‑level designs — Surface‑mount 54‑BGA footprint (0.8 mm pitch, 8×8×1 mm body) for space‑constrained layouts.

Unique Advantages

• Synchronous, predictable timing: Inputs are sampled on the clock’s positive edge, enabling precise cycle control for deterministic memory transactions.
• Flexible latency and burst control: CAS Latency options (2 & 3) and programmable burst lengths and types provide design flexibility for different throughput and latency requirements.
• Four‑bank organization: Banked memory structure supports interleaved accesses to improve effective bandwidth in multi‑access systems.
• Compact BGA package: 54‑ball BGA with 0.8 mm pitch and 8×8×1 mm body reduces PCB area and supports high‑density designs.
• JEDEC and RoHS compliance: JEDEC‑standard supply and qualification with Pb‑free / RoHS‑compliant manufacturing simplify regulatory and supply considerations.
• Built‑in refresh and low‑level power control: Auto and self‑refresh support and CKE clock enable control help manage power and data integrity.

Why Choose M12L2561616A-5BG2T?

The M12L2561616A-5BG2T delivers a synchronous DRAM solution that balances capacity (268,435,456 bits), timing flexibility and a compact BGA footprint for designers targeting high‑bandwidth memory systems. Its JEDEC‑compliant 3.3V operation, programmable latencies, burst modes and four‑bank architecture make it suitable for designs that require predictable timing and configurable performance.

Ideal for engineers and procurement teams specifying commercial‑grade SDRAM for compact, high‑performance memory subsystems, this device offers a combination of capacity, timing options and board‑level integration that supports scalable and reliable memory designs.

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