M12L2561616A-6B(2T)

The M12L2561616A-6B(2T) is a synchronous DRAM device organized as 4 × 4,194,304 words by 16 bits for a total density of 268,435,456 bits (268.4 Mbit). Its synchronous design and JEDEC-standard operation make it suitable for high-bandwidth, high-performance memory system applications where precise cycle control and predictable timing are required.

With support for programmable burst lengths and CAS latencies, four-bank operation and standard refresh modes, the device targets board-level memory expansion and embedded designs that require flexible, parallel SDRAM interfaces in surface-mount TSOP II or BGA packages.

Key Features

• Core / Architecture Synchronous DRAM organized as 16M × 16 with four internal banks for efficient high-bandwidth access patterns.
• Memory Capacity & Timing 268.4 Mbit total capacity with 166 MHz maximum clock frequency and a 5 ns access-time rating; write cycle time (word/page) specified at 12 ns.
• Programmable Performance Supports CAS Latency 2 and 3, and selectable burst lengths (1, 2, 4, 8 and full page) with sequential and interleave burst types to match system performance needs.
• Interface & Signal Compatibility Parallel memory interface with LVTTL-compatible inputs and all inputs sampled on the positive edge of the system clock for predictable timing.
• Refresh & Power Management Auto and self refresh modes with a 64 ms refresh period (8K cycle); MRS cycle with address-key programming for device configuration.
• Data Masking & Control DQM for masking, LDQM/UDQM byte control, and standard control signals (CLK, CS, CKE, RAS, CAS, WE) for conventional SDRAM command sequences.
• Package & Mounting Available in 54-pin TSOP II and 54-ball FBGA packages; surface-mount mounting for board-level integration.
• Qualification & Compliance JEDEC qualification and RoHS-compliant (Pb-free) products; commercial-grade operating temperature range of 0°C to 70°C.

Typical Applications

• High-bandwidth memory subsystems Used where synchronous, predictable DRAM access and burst transfers are required for sustained throughput.
• Embedded systems Fits board-level memory expansion needs for embedded devices that require parallel SDRAM interfaces and programmable latencies.
• Consumer and industrial electronics Integrates into designs that benefit from configurable burst modes, CAS latency options and standard refresh control.

Unique Advantages

• Flexible latency and burst configuration: CAS latency options (2 & 3) and multiple burst lengths let designers tune performance to application timing requirements.
• Predictable synchronous operation: All inputs sampled on the positive clock edge provide consistent timing behavior for high-speed system designs.
• Four-bank architecture: Enables improved concurrency and throughput across read/write accesses compared with single-bank designs.
• Standardized packaging choices: TSOP II and BGA packages support a range of board-level assembly and space requirements while using surface-mount mounting.
• JEDEC and RoHS alignment: JEDEC qualification and Pb-free compliance support standard manufacturing and environmental requirements for commercial applications.

Why Choose M12L2561616A-6B(2T)?

The M12L2561616A-6B(2T) delivers synchronous, JEDEC-standard SDRAM functionality with a 16M × 16 organization and 268.4 Mbit density, designed for applications that demand predictable timing, configurable latency, and flexible burst modes. Its combination of four-bank operation, standard control signals and refresh modes makes it suitable for high-bandwidth memory subsystems and embedded board-level designs.

With surface-mount TSOP II and BGA package options, commercial-grade temperature range and RoHS compliance, this device offers a practical, standards-aligned memory building block for projects requiring reliable, configurable SDRAM performance.

Request a quote or submit an inquiry to obtain pricing and availability for the M12L2561616A-6B(2T).