M12L2561616A-7B(2T)

The M12L2561616A-7B(2T) from ESMT is a synchronous DRAM device organized as 16M × 16, providing 268.4 Mbit of volatile memory in a high-data-rate SDRAM architecture with four internal banks. It is designed for high-bandwidth, high-performance memory system applications requiring precise cycle control and flexible access modes.

This device supports programmable burst lengths and latencies, JEDEC qualification, and is offered in surface-mount TSOP II and BGA54 packages to suit a range of assembly and board-layout requirements.

Key Features

• Memory Capacity & Organization 268.4 Mbit total capacity organized as 16M × 16 bits across four banks for parallel, high-throughput access.
• Performance Rated to 143 MHz with an access time of 5 ns and a write cycle time (word page) of 14 ns to support synchronous, high-data-rate operation.
• Programmable Burst & Latency Supports CAS latency 2 and 3, programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) for flexible throughput tuning.
• Synchronous Interface All inputs are sampled on the positive edge of the system clock; LVTTL compatible address multiplexing and parallel memory interface simplify timing integration.
• Refresh & Power Management Auto and self refresh supported with a 64 ms refresh period (8K cycles); CKE pin available to freeze operation and reduce power in standby.
• Signal Masking & Data Control DQM (data mask) support for read/write masking; separate LDQM/UDQM signals available per device pinout.
• Package & Mounting Available in 54-pin TSOP II and 54-ball FBGA (BGA54) surface-mount packages to accommodate different PCB and thermal design constraints.
• Power & Compliance Datasheet references JEDEC-standard 3.3V power supply and the product is RoHS compliant; device qualification: JEDEC.
• Operating Range Commercial grade operating temperature range of 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory systems — Ideal for applications that require synchronous, high-data-rate DRAM with programmable burst behavior and low-latency access.
• Embedded systems with high-throughput needs — Suited for designs that need parallel SDRAM organization and flexible timing control.
• Board-level designs requiring compact surface-mount memory — TSOP II and BGA54 packages provide options for dense PCB layouts and assembly processes.

Unique Advantages

• Flexible throughput tuning — Programmable burst lengths and CAS latencies allow designers to optimize for bandwidth or latency per application requirements.
• Four-bank architecture — Banked internal organization improves concurrency and sustained data transfer rates for high-performance memory access patterns.
• Commercial-grade, JEDEC-qualified — Qualification to JEDEC standards provides predictable interoperability and a defined compliance baseline.
• Surface-mount package choices — Availability in 54-pin TSOP II and 54-ball FBGA supports multiple assembly and thermal strategies.
• Power-management features — Auto/self refresh and clock-enable (CKE) support help manage standby power without sacrificing system-level refresh integrity.
• RoHS-compliant — Pb-free manufacturing aligns with lead-free assembly and environmental compliance requirements.

Why Choose M12L2561616A-7B(2T)?

The M12L2561616A-7B(2T) delivers a practical combination of synchronous high-data-rate performance and flexible timing features tailored to high-bandwidth memory system designs. Its 16M × 16 organization, four-bank architecture, and support for programmable burst lengths and CAS latencies make it a strong fit for engineers seeking controllable throughput and low-latency operation in commercial-temperature applications.

With JEDEC qualification, RoHS compliance, and surface-mount package options (54-pin TSOP II or 54-ball FBGA), this ESMT SDRAM part supports a range of board-level implementations while maintaining predictable electrical and timing behavior for production designs.

Request a quote or submit an inquiry to receive pricing and availability for the M12L2561616A-7B(2T).