M12L2561616A-6T(2T)

The M12L2561616A-6T(2T) from ESMT is a synchronous DRAM device offering 268,435,456 bits of storage organized as 4 × 4,194,304 words by 16 bits. Its synchronous design with four-bank operation and JEDEC-standard 3.3V power supply supports high-data-rate memory system implementations.

Designed for high-bandwidth, high-performance memory system applications, this SDRAM provides programmable burst lengths and CAS latencies, flexible timing options and support for a 166 MHz clock frequency (–6 variant), giving designers control over throughput and timing trade-offs.

Key Features

• Core & Organization  268,435,456-bit capacity organized as 4 × 4,194,304 × 16 with four internal banks for parallelized access.
• Performance  166 MHz maximum clock frequency for the –6 grade; typical access time of 5 ns and write cycle time (word/page) of 12 ns.
• Programmable Timing & Burst  CAS latency options of 2 and 3; selectable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) for flexible transfer modes.
• Interface & Control  Parallel memory interface with LVTTL-compatible, multiplexed address inputs sampled on the positive edge of CLK; DQM support for data masking.
• Refresh & Power  Auto and self-refresh support with a 64 ms refresh period (8K cycles) and JEDEC-standard 3.3V power supply.
• Packaging & Mounting  Available in 54-pin TSOP II and 54-ball BGA packages; surface-mount mounting for compact board-level integration.
• Operating Range & Compliance  Commercial-grade operating temperature of 0 °C to 70 °C and JEDEC qualification; all Pb-free products are RoHS-compliant.

Typical Applications

• High-bandwidth memory subsystems  Use where sustained data throughput and programmable burst behavior are required to match system timing.
• JEDEC 3.3V system designs  Integrates into systems that follow JEDEC SDRAM power and interface conventions.
• Compact board-level memory solutions  Surface-mount TSOP II or BGA54 packages enable dense memory layouts on space-constrained PCBs.

Unique Advantages

• Flexible timing configuration: CAS latency 2/3 and multiple burst length options let designers tune latency and throughput to application needs.
• Four-bank architecture: Enables interleaved access patterns to improve effective bandwidth for concurrent memory operations.
• JEDEC standard compatibility: 3.3V supply and defined refresh behavior simplify integration into standard SDRAM systems.
• Package choice for design flexibility: Offered in both TSOP II and BGA54 packages to suit assembly and space requirements.
• System-friendly interface: LVTTL multiplexed address inputs sampled on CLK and DQM support make control and data masking straightforward.
• Regulatory readiness: Pb-free construction and RoHS compliance support environmental requirements.

Why Choose M12L2561616A-6T(2T)?

The M12L2561616A-6T(2T) positions itself as a practical choice for designers needing a JEDEC-compatible synchronous DRAM with flexible timing and burst modes, four-bank operation and a 166 MHz clock grade. Its combination of capacity, programmable performance parameters and surface-mount package options makes it suitable for a range of high-bandwidth memory system applications.

Backed by ESMT's SDRAM series specifications and commercial-grade qualification, this device offers a verifiable platform for designs that require predictable refresh behavior, parallel interface control and standard 3.3V power operation.

Request a quote or contact sales to discuss availability, pricing and lead times for the M12L2561616A-6T(2T).