M12L2561616A-6TG2T

The M12L2561616A-6TG2T is a synchronous DRAM device offering 268,435,456 bits of volatile memory organized as 4,194,304 words × 16 bits across four internal banks. Designed to operate from a JEDEC-standard 3.3V supply (3.0V–3.6V operating range) and rated for 166 MHz system clock operation, the device supports synchronous, high-data-rate memory system designs.

Its feature set — including programmable burst lengths and latencies, four-bank architecture, and standard SDRAM control signals — makes it suitable for a variety of commercial, high-bandwidth memory system applications that require deterministic, clocked memory access.

Key Features

• Memory Architecture 268,435,456 bits organized as 4M × 16 with four internal banks for concurrent bank operation.
• Synchronous DRAM Operation All inputs are sampled on the positive edge of the system clock for deterministic timing and high-data-rate transfers.
• Performance Rated for up to 166 MHz system clock frequency with an access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
• Flexible Burst and Latency Supports CAS latencies of 2 and 3 and programmable burst lengths (1, 2, 4, 8, full page) with sequential and interleave burst types.
• Control and Data Masking Standard SDRAM control signals (CLK, CS, RAS, CAS, WE, CKE) plus DQM/LDQM/UDQM for data masking and byte control.
• Refresh and Power Auto and self-refresh supported with a 64 ms refresh period (8K cycle); JEDEC 3.3V power supply compliance and 3.0V–3.6V operating range.
• Package and Mounting Available in a 54-lead TSOP II surface-mount package (TSOPII) with 0.8 mm pitch.
• Commercial Grade & Compliance Commercial-grade device qualified to JEDEC specifications and offered in Pb-free, RoHS-compliant form.
• Parallel Memory Interface Standard parallel SDRAM interface for easy integration into legacy and contemporary memory controller designs.
• Operating Temperature Specified for commercial operation from 0 °C to 70 °C.

Typical Applications

• High-Bandwidth Memory Subsystems Use as synchronous DRAM in memory subsystems that require predictable clocked access and programmable burst behavior.
• Commercial Embedded Systems Suitable for commercial embedded designs that need a compact, surface-mount SDRAM solution in a TSOP II footprint.
• System Buffers and Caches Acts as a high-speed buffer or cache in systems where parallel SDRAM interface and banked operation improve throughput.

Unique Advantages

• Deterministic Clocked Operation: Synchronous design with inputs sampled on the positive clock edge enables precise cycle control and predictable timing.
• Flexible Performance Tuning: Programmable CAS latencies and burst lengths allow designers to match timing behavior to system requirements.
• Four-Bank Architecture: Multiple internal banks improve effective concurrency for interleaved access patterns and higher sustained throughput.
• JEDEC 3.3V Compatibility: Standard 3.3V power supply support and a defined 3.0V–3.6V operating range simplify integration with common system rails.
• Compact Surface-Mount Package: 54-TSOP II package provides a small footprint for space-constrained board layouts while maintaining a parallel SDRAM interface.
• Regulatory Compliance: Pb-free and RoHS-compliant manufacturing supports environmentally conscious designs and regulatory requirements.

Why Choose M12L2561616A-6TG2T?

The M12L2561616A-6TG2T positions itself as a JEDEC-compliant, commercial-grade SDRAM offering a balance of performance, flexibility, and compact packaging. Its synchronous operation, programmable timing options, and four-bank organization make it well suited to designers implementing high-bandwidth, clocked memory subsystems in commercial products.

For engineering teams targeting deterministic memory behavior in space-constrained boards using a standard parallel SDRAM interface, this TSOP II packaged device delivers the memory density, timing control, and JEDEC compatibility needed for robust system-level integration.

Request a quote or submit an RFQ to receive pricing, lead-time information, and sample availability for the M12L2561616A-6TG2T. Our team can provide technical details and help evaluate the device for your design requirements.