M12L2561616A-7TG2T

The M12L2561616A-7TG2T is a 268,435,456‑bit synchronous high data rate Dynamic RAM organized as 4 × 4,194,304 words by 16 bits with four internal banks. This 3.3V JEDEC‑standard SDRAM supports synchronous operation, programmable burst length and latencies, and is offered in a 54‑lead TSOP II surface‑mount package for compact system integration.

Designed for high‑bandwidth, high‑performance memory system applications, the device provides flexible timing and refresh options along with LVTTL‑compatible signaling and standard parallel interface operation at up to 143 MHz for the -7TG2T grade.

Key Features

• Memory Architecture – 268,435,456 bits organized as 4M × 16 with four internal banks, enabling banked operation for improved throughput.
• Synchronous DRAM Core – JEDEC‑standard 3.3V supply and all inputs sampled on the positive edge of the system clock for deterministic timing.
• Performance & Timing – Maximum frequency for this part is 143 MHz with specified access time of 5.4 ns and write cycle time (word/page) of 14 ns; supports CAS latency 2 and 3.
• Burst and Access Flexibility – Programmable burst length (1, 2, 4, 8 and full page) and burst type (sequential and interleave) to match system access patterns.
• Interface & Control – Parallel memory interface with LVTTL compatibility, DQM data masking, and standard control pins (CLK, CS, CKE, RAS, CAS, WE, BAx, Ax).
• Refresh and Power Management – Auto and self‑refresh support with a 64 ms refresh period (8K cycle) and CKE for clock enable/power control.
• Voltage and Package – Operates from 3.0 V to 3.6 V; available in 54‑lead TSOP II (surface mount) package for compact PCB layouts.
• Compliance and Environment – JEDEC qualified and RoHS‑compliant Pb‑free product, commercial grade with an operating temperature range of 0 °C to 70 °C.

Typical Applications

• High‑bandwidth memory subsystems – Well suited for systems requiring banked SDRAM with programmable burst/latency options to service sustained data streams.
• Compact PCB designs – 54‑lead TSOP II surface‑mount package enables dense placement in space‑constrained consumer and embedded boards.
• JEDEC‑standard SDRAM designs – Use where a standard 3.3V SDRAM component with JEDEC compatibility and self‑refresh is required for mainstream memory applications.

Unique Advantages

• Banked memory organization: Four internal banks (4M × 16 each) increase effective concurrency for interleaved access patterns and higher sustained throughput.
• Flexible timing configuration: CAS latency options (2 & 3) and multiple burst lengths let designers tune latency and bandwidth for target workloads.
• Standardized, deterministic interface: Synchronous operation with inputs sampled on the clock edge ensures predictable timing in system designs.
• Power and refresh control: Auto/self‑refresh plus CKE allow straightforward power state control and reliable data retention management over the 64 ms refresh interval.
• Compact, manufacturable packaging: 54‑TSOP II surface‑mount package supports automated assembly and dense board designs for volume production.
• Regulatory and quality alignment: JEDEC qualification and RoHS‑compliant Pb‑free construction support standard industry manufacturing and environmental requirements.

Why Choose M12L2561616A-7TG2T?

The M12L2561616A-7TG2T positions itself as a practical choice for designers needing a JEDEC‑standard 3.3V SDRAM with banked architecture, flexible burst/latency control and reliable refresh management. Its 4M×16 organization, 143 MHz grade performance, and standard control/interface signals make it suitable for mainstream high‑bandwidth memory subsystems where deterministic synchronous timing is required.

With TSOP II surface‑mount packaging, RoHS‑compliance and commercial operating range, this device supports compact PCB implementations and standard manufacturing flows while providing the timing and interface options engineers rely on for scalable, robust memory subsystems.

Request a quote or submit an RFQ to evaluate the M12L2561616A-7TG2T for your next high‑performance memory design.