M12L5121632A-5B(2T)

The M12L5121632A-5B(2T) is a synchronous DRAM device from ESMT organized as 32M × 16 (4 banks) delivering 536,870,912 bits of storage. Its synchronous architecture with programmable latencies and burst control supports high data-rate memory system designs.

Designed for high-bandwidth, high-performance memory system applications, the device offers selectable CAS latency, flexible burst lengths and burst types, and features for power-efficient operation and system refresh control.

Key Features

• Memory Organization The device is organized as 32M × 16 (4 × 8,388,608 words by 16 bits) for a total of 536,870,912 bits (536.9 Mbit).
• Synchronous SDRAM Architecture Synchronous DRAM with four-bank operation, all inputs sampled on the positive edge of the system clock, and support for burst read / single write operations.
• Performance Maximum clock frequency listed at 200 MHz with access time of 5 ns and a write cycle time (word/page) of 10 ns.
• Latency & Burst Control Programmable CAS latency (2 and 3), selectable burst lengths (1, 2, 4, 8 & full page) and burst types (sequential and interleave) to match system timing requirements.
• Refresh & Data Masking Supports auto and self-refresh with a 64 ms refresh period (8K cycle) and DQM for data masking during transfers.
• Power Datasheet indicates JEDEC standard 3.3V power supply; product specification lists a 2.5V supply. (Both values are provided in the product documentation.)
• Package & Mounting Available in 54-pin TSOP II and 54-ball FBGA package options; surface-mount mounting type.
• Qualification & Compliance JEDEC-qualified design and RoHS-compliant (Pb-free where specified); commercial grade with operating temperature 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory systems Deploy where synchronous high-data-rate DRAM with programmable latency and burst operation is required.
• Performance-sensitive designs Use in systems that need selectable CAS latency and burst modes to align memory timing with system controllers.
• Parallel-interface memory subsystems Suitable for designs using a parallel memory interface with banked access and DQM masking.

Unique Advantages

• Configurable timing and bursts CAS latency options and multiple burst-length modes let designers optimize throughput versus latency for target workloads.
• High-frequency operation Documented up to 200 MHz and 5 ns access time support higher data-rate applications.
• Banked architecture Four-bank operation enables more efficient command scheduling and sustained data transfer patterns.
• Refresh and masking features Auto/self-refresh and DQM support maintain data integrity while enabling selective masking during transfers.
• Package flexibility Available in TSOP II and BGA packages to suit board-level routing and assembly requirements.
• Standards and compliance JEDEC qualification and RoHS status provide traceable manufacturing and environmental compliance information.

Why Choose M12L5121632A-5B(2T)?

The M12L5121632A-5B(2T) positions itself as a synchronous SDRAM option for designers requiring a banked, high-data-rate DRAM with configurable latency and burst behavior. Its documented 200 MHz operation, programmable CAS latencies, and burst controls make it suitable for memory subsystems that need predictable, clock-synchronous timing.

With package options in TSOP II and FBGA, JEDEC qualification and RoHS compliance, this device fits commercial designs that prioritize integration, timing flexibility, and standard-compliant memory behavior. It is appropriate for engineers specifying parallel-interface SDRAM with surface-mount packages and commercial temperature range.

Request a quote for M12L5121632A-5B(2T) to evaluate pricing and availability for your design requirements.