M12L5121632A-6B(2T)

The M12L5121632A-6B(2T) is a synchronous DRAM device organized as 32M × 16 (4 × 8,388,608 × 16) offering 536.9 Mbit of volatile memory capacity. Designed to JEDEC 3.3V supply conventions, the device supports synchronous clocked operation with programmable burst lengths and CAS latencies for high-bandwidth, high-performance memory subsystems.

This SDRAM is targeted at systems requiring predictable synchronous timing, flexible burst control and standard surface-mount packages (TSOP II or 54-ball BGA) in commercial-temperature environments.

Key Features

• Memory Organization & Capacity 536.9 Mbit total capacity arranged as 32M × 16 (4 banks of 8,388,608 words × 16 bits), enabling wide data-path operation.
• Synchronous Operation & Clock Supports synchronous DRAM operation with a specified max clock frequency of 166 MHz and all inputs sampled on the positive edge of the system clock.
• Programmable Latency & Burst Control CAS latency options of 2 and 3 with programmable burst lengths (1, 2, 4, 8 and full page) and sequential or interleave burst types to match system timing and throughput needs.
• Timing & Access 5 ns access time and 12 ns write cycle time (word/page) enable tight, repeatable timing for synchronous memory designs.
• Banking, Refresh & Masking Four-bank operation with auto and self-refresh support, 64 ms refresh period (8K cycles), and DQM for data masking.
• Interface & Compatibility Parallel memory interface with LVTTL-compatible multiplexed address signals per JEDEC conventions.
• Package & Mounting Available in 54-pin TSOP II and 54-ball FBGA (BGA54) surface-mount packages to suit PCB assembly requirements.
• Operating Range & Compliance Commercial grade, JEDEC-qualified, RoHS-compliant, with an operating temperature range of 0°C to 70°C.

Typical Applications

• High-bandwidth memory subsystems — Use where synchronous, multi-bank SDRAM with programmable burst and latency is required to sustain throughput.
• Synchronous system memory — Fits designs that rely on clocked, predictable DRAM transactions sampled on the positive clock edge.
• PCB implementations with surface-mount packages — Suitable for boards designed for TSOP II or 54-ball BGA SDRAM placement and routing.

Unique Advantages

• Flexible performance tuning — CAS latency (2 & 3) and multiple burst lengths allow designers to optimize latency vs. throughput for target workloads.
• Synchronous, predictable timing — Positive-edge clock sampling and a defined 166 MHz clock class enable deterministic memory transactions.
• Robust refresh and masking features — Auto/self-refresh and DQM support simplify integration into systems that require reliable data integrity and selective masking.
• Multiple package options — Choice of 54-pin TSOP II or 54-ball BGA supports different board-level assembly and density requirements.
• Standards-based supply and qualification — JEDEC 3.3V supply convention and JEDEC qualification streamline design alignment with industry practices.
• Regulatory-friendly — RoHS-compliant construction supports modern environmental and manufacturing requirements.

Why Choose M12L5121632A-6B(2T)?

The M12L5121632A-6B(2T) combines a 536.9 Mbit synchronous DRAM architecture with flexible latency and burst options, making it suitable for designers seeking predictable, high-bandwidth memory behavior in commercial-temperature systems. Its four-bank organization, programmable modes and standard JEDEC 3.3V operation simplify integration into synchronous memory subsystems.

This device is well suited to engineering teams and procurement looking for a JEDEC-qualified, RoHS-compliant SDRAM available in surface-mount TSOP II and BGA packages, offering a clear path for board-level assembly and timing optimization across a range of commercial applications.

Request a quote or submit an inquiry to obtain pricing, availability and lead-time details for the M12L5121632A-6B(2T).