M12L5121632A-5BG2T

The M12L5121632A-5BG2T from ESMT is a 536,870,912‑bit synchronous DRAM organized as 4 × 8,388,608 words by 16 bits. Designed to JEDEC 3.3V standards, this device provides synchronous operation with precise cycle control and supports up to 200 MHz system clocks.

Its architecture—four banks, programmable latencies and burst lengths, and parallel interface—addresses high‑bandwidth, high‑performance memory system applications where predictable timing and flexible data transfers are required.

Key Features

• Memory Core 536,870,912‑bit SDRAM organized as 4 × 8,388,608 words × 16 bits for high-density, word‑organized storage.
• Performance Up to 200 MHz operation with CAS latency options of 2 and 3 and a typical access time of 4.5 ns; write cycle time (word/page) is specified at 10 ns.
• Burst and Latency Options Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) to match system transfer patterns.
• Banked Architecture Four independent banks support concurrent bank operations and improved throughput for burst reads and single‑write transactions.
• Interface and Control Parallel memory interface with LVTTL‑compatible, multiplexed address inputs; all inputs sampled on the rising edge of CLK. Includes DQM for byte masking and MRS cycle support.
• Refresh and Power Auto and self‑refresh support with 64 ms refresh period (8K cycle). JEDEC standard 3.3V supply; operating range 3.0 V to 3.6 V.
• Package and Mounting Pb‑free 54‑ball BGA (BGA54) surface‑mount package; body 8 mm × 8 mm × 1 mm with 0.8 mm ball pitch.
• Commercial Grade and Temperature Commercial qualification with operating temperature range 0 °C to 70 °C and RoHS‑compliant, Pb‑free construction.

Typical Applications

• High‑bandwidth memory subsystems — Suited to memory designs that require synchronous, high‑rate transfers and programmable burst behavior.
• Performance‑sensitive computing modules — Provides predictable timing with selectable CAS latencies for systems needing controlled access timing.
• System buffering and caching — Four‑bank organization and DQM masking support efficient burst reads and masked writes for buffering roles.

Unique Advantages

• Synchronous timing control: All inputs are sampled on the positive edge of CLK, enabling precise cycle timing for predictable system behavior.
• Flexible throughput configuration: Selectable CAS latencies and multiple burst lengths/types let designers optimize for latency or sustained transfer rates.
• Four‑bank architecture: Supports concurrent bank operation to improve effective throughput in burst and random access patterns.
• JEDEC 3.3V compliance and wide supply range: Operates across 3.0 V to 3.6 V, matching common system power rails and JEDEC requirements.
• Compact BGA54 package: 8 mm × 8 mm × 1 mm BGA with 0.8 mm ball pitch delivers high density in a surface‑mount format.
• RoHS‑compliant, Pb‑free construction: Meets environmental requirements for lead‑free assemblies.

Why Choose M12L5121632A-5BG2T?

The M12L5121632A-5BG2T combines a high‑density 536.9 Mbit SDRAM array with synchronous operation, programmable latency and burst flexibility to support high‑bandwidth, high‑performance memory systems. Its four‑bank organization, DQM masking and JEDEC‑compliant 3.3 V operation make it suitable for designs that require controlled timing, configurable transfer modes and compact BGA packaging.

This device is targeted at designers and system integrators building memory subsystems that need predictable timing and scalable throughput while maintaining a compact surface‑mount footprint and commercial temperature range.

Request a quote or submit an inquiry to receive pricing, availability and ordering information for M12L5121632A-5BG2T. Our team can provide lead‑time and volume support details to help you plan your design and procurement.