M12L5121632A-6BG2T

The M12L5121632A-6BG2T is a synchronous DRAM device providing 536,870,912 bits of volatile memory organized as 4 × 8,388,608 words by 16 bits. It implements a parallel memory interface with JEDEC-standard 3.3V supply and is offered in a compact 54‑BGA package for commercial‑grade applications.

Designed for high-bandwidth, high-performance memory subsystems, the device supports programmable burst lengths and latencies, four-bank operation and synchronous clocked I/O to enable predictable, cycle‑accurate data transfers in commercial embedded designs.

Key Features

• Memory Architecture 536.9 Mbit density organized as 8M × 16 with 4 banks for parallelized access and flexible memory mapping.
• Synchronous Operation & Timing System inputs are sampled on the positive edge of CLK; supports CAS latency 2 and 3, programmable burst length (1, 2, 4, 8, full page), and burst types (sequential & interleave).
• Performance Specified for 166 MHz operation with typical access time 5.4 ns and write cycle time (word/page) of 12 ns.
• Interface & Control Parallel address/data interface with LVTTL‑compatible multiplexed address, DQM data masking, and support for burst read/single write operations.
• Power & Supply JEDEC standard 3.3V power supply with an allowable voltage range of 3.0V to 3.6V.
• Refresh & Low‑level Functions Auto and self refresh supported with a 64 ms refresh period (8K cycle), and MRS cycle for mode programming.
• Package & Mounting Surface-mount 54‑BGA (0.8 mm ball pitch, 8 mm × 8 mm body) suitable for compact board layouts.
• Commercial Grade & Compliance Commercial temperature range (0 °C to 70 °C), JEDEC qualification, and RoHS‑compliant (Pb‑free).

Typical Applications

• High‑bandwidth memory subsystems — Suitable where synchronous DRAM with programmable bursts and predictable timing is required for sustained data throughput.
• Embedded commercial systems — Compact 54‑BGA package and commercial temperature rating make it appropriate for space‑constrained embedded designs.
• System buffers and caches — Four‑bank organization and DQM masking allow efficient buffering and localized data handling in memory subsystems.

Unique Advantages

• Flexible timing and burst control: CAS latency 2/3 plus multiple burst lengths and burst types enable tuning for specific throughput and latency requirements.
• Predictable synchronous operation: All inputs sampled on the positive edge of CLK allow cycle‑accurate control in timing‑sensitive designs.
• Four‑bank architecture: Banked memory organization improves parallel access and supports interleaved operations for higher effective bandwidth.
• JEDEC 3.3V compatibility: Standard voltage support (3.0V–3.6V) eases system integration with established memory controllers and power rails.
• Compact BGA packaging: 54‑BGA footprint enables high‑density PCB layout while maintaining the surface‑mount form factor for automated assembly.
• Commercial qualification and RoHS compliance: JEDEC qualification and Pb‑free status support standard commercial product lifecycles and environmental compliance.

Why Choose M12L5121632A-6BG2T?

The M12L5121632A-6BG2T balances performance and integration with a 536.9 Mbit synchronous DRAM core, 166 MHz operation, and programmable timing features to meet demanding memory‑subsystem requirements. Its four‑bank organization, burst control and JEDEC‑standard 3.3V operation make it a dependable choice for commercial embedded designs that need predictable, cycle‑accurate memory behavior.

Offered in a compact 54‑BGA surface‑mount package with commercial temperature rating and RoHS compliance, this device is suited for designers seeking a standardized SDRAM solution with straightforward board‑level integration and vendor‑documented specifications.

Request a quote or submit an inquiry to obtain pricing and availability for the M12L5121632A-6BG2T and support integration into your next memory subsystem design.