M12L5121632A-7BG2T

The M12L5121632A-7BG2T is a synchronous DRAM device organized as 4 × 8,388,608 words by 16 bits (536,870,912 bits / 536.9 Mbit). It implements a four-bank architecture with synchronous, clocked I/O to support predictable, high-bandwidth memory system operation.

Designed for JEDEC-compliant systems, this commercial-grade SDRAM operates from 3.0 V to 3.6 V, targets a clock frequency of 143 MHz, and is supplied in a 54-ball BGA package optimized for surface-mount assembly and compact system designs.

Key Features

• Memory Organization  4 × 8,388,608 words by 16 bits (8M × 16) providing 536,870,912 bits total capacity.
• Performance  Clock frequency 143 MHz with access time of 5.4 ns and write cycle time (word/page) of 14 ns; supports CAS latency 2 and 3.
• Burst and Access Control  Programmable burst length (1, 2, 4, 8 and full page) and burst types (sequential & interleave) for flexible transfer modes.
• Four-Bank Operation  Independent bank selection (BA0/BA1) for improved command scheduling and concurrent bank utilization.
• Interface and Timing  All inputs are sampled on the positive edge of the system clock; LVTTL compatible with multiplexed address lines (row/column multiplexing).
• Data Mask and Refresh  DQM support for data masking, plus auto and self-refresh operation with a 64 ms refresh period (8K cycles).
• Power and Voltage  JEDEC standard 3.3 V supply range (3.0 V–3.6 V) for compatibility with common SDRAM power domains.
• Package and Mounting  54-ball BGA (BGA54) surface-mount package; ball layout and mechanical dimensions per device ball-configuration data (BGA 8 mm × 8 mm × 1 mm body, 0.8 mm ball pitch).
• Commercial Grade & Compliance  Commercial operating temperature range 0 °C to 70 °C and JEDEC qualification; all Pb‑free products are RoHS-compliant.

Typical Applications

• High-bandwidth memory subsystems  Use where predictable, clocked SDRAM transactions and burst transfers are required in compact board designs.
• Embedded system memory  Suitable for embedded and general-purpose systems that require a JEDEC SDRAM device with programmable latencies and burst modes.
• Compact BGA module designs  Ideal for designs needing surface-mount BGA packaging to save PCB area while maintaining JEDEC SDRAM functionality.

Unique Advantages

• Synchronous, predictable timing  Positive-edge sampling of inputs and support for CAS latency options enable deterministic memory timing for system design.
• Flexible transfer modes  Programmable burst lengths and burst types let designers optimize throughput and access patterns for various workloads.
• Four-bank architecture  Banked operation improves command concurrency and can increase effective throughput in multi-access scenarios.
• Compact BGA package  54-ball BGA footprint reduces board area for dense system implementations while preserving robust electrical connections.
• JEDEC compliance and RoHS  Commercial JEDEC qualification and Pb‑free RoHS compliance simplify integration into standardized supply chains.

Why Choose M12L5121632A-7BG2T?

The M12L5121632A-7BG2T delivers a JEDEC-standard synchronous DRAM solution with 536.9 Mbit capacity, four-bank organization, and flexible timing features (CAS latency, burst lengths) that support a range of high-bandwidth memory system requirements. Its 143 MHz clock rating, positive-edge sampled inputs, and DQM masking make it suitable for designs that require predictable SDRAM behavior and programmable transfer modes.

This device is well suited for designers and procurement teams seeking a commercial-grade SDRAM in a compact 54-BGA package with a standard 3.0 V–3.6 V supply range and RoHS compliance, providing a balance of performance, integration, and JEDEC-backed compatibility.

Request a quote or submit a purchasing inquiry for M12L5121632A-7BG2T to receive pricing and availability information for your design requirements.