M12L5121632A-6TG2T

The M12L5121632A-6TG2T is a synchronous DRAM device organized as 4 × 8,388,608 words by 16 bits (536,870,912 bits). It implements JEDEC-standard 3.3V operation and provides programmable burst length and latencies for precise, clocked memory transactions.

Designed for high-bandwidth, high-performance memory system applications, this device offers a 166 MHz operating frequency, 5.4 ns access time, and features such as CAS latency selection, auto/self refresh and DQM masking to support a variety of synchronous memory designs.

Key Features

• Memory Core 536.9 Mbit SDRAM organized as 8M × 16 with four internal banks for concurrent bank operation and flexible address mapping.
• Performance 166 MHz maximum frequency (part variant -6) with 5.4 ns access time and 12 ns write cycle time (word/page) to support high-throughput read/write cycles.
• Programmable Burst & Latency Supports CAS latency 2 and 3, burst lengths (1, 2, 4, 8, full page) and sequential/interleave burst types for configurable data-transfer behavior.
• Interface & Control Synchronous parallel interface sampled on the positive edge of CLK with standard commands (RAS/CAS/WE), BA0/BA1 bank selection and DQM data masking.
• Power & Refresh JEDEC 3.3V supply range (3.0 V to 3.6 V) with auto and self refresh capability and a 64 ms refresh period (8K cycle) for retained data integrity during standby.
• Package & Mounting Surface-mount 54-lead TSOP II (400 mil × 875 mil body, 0.8 mm pitch) optimized for compact board-level integration.
• Operating Conditions & Compliance Commercial grade with operating temperature 0 °C to 70 °C and RoHS-compliant, JEDEC-qualified design.

Typical Applications

• High-bandwidth memory subsystems Suitable for memory systems that require synchronous, clocked DRAM with programmable burst and latency options to tune throughput and timing.
• Embedded systems with parallel memory interfaces Used where a parallel SDRAM interface and predictable synchronous timing are required for sustained data transfer.
• Space-constrained board designs The 54-TSOP II surface-mount package supports compact PCB layouts while providing a full 8M×16 memory organization.

Unique Advantages

• Flexible timing configuration CAS latency options and multiple burst-length settings let designers optimize throughput and latency to match system requirements.
• JEDEC-standard 3.3V operation Ensures predictable power behavior across 3.0 V to 3.6 V supply rails and compatibility with JEDEC-compliant memory controllers.
• Four-bank architecture Internal 4-bank organization enables interleaved operation and improved effective throughput for concurrent accesses.
• Built-in refresh and masking Auto/self refresh and DQM masking provide reliable data retention and controlled I/O during partial transfers or power management states.
• Compact surface-mount package 54-TSOP II package supports low-profile board designs while providing the pins needed for full SDRAM control and data lines.
• Regulatory and quality markers RoHS-compliant and JEDEC-qualified to support commercial production requirements.

Why Choose M12L5121632A-6TG2T?

The M12L5121632A-6TG2T positions itself as a practical choice for designers who need synchronous, high-data-rate DRAM with configurable timing and burst behavior. Its 8M×16 organization, four-bank architecture and JEDEC 3.3V operation deliver deterministic, clock-driven memory transactions well suited to high-throughput system designs.

This device is ideal for commercial embedded and system-level designs that require surface-mount integration (54-TSOP II), refresh management and programmable latency/burst options. Its suite of features supports scalable memory architectures with established JEDEC compliance and RoHS status for production deployment.

Request a quote or submit a pricing inquiry to obtain availability and lead-time information for the M12L5121632A-6TG2T.