M12L5121632A-7TG2T

The M12L5121632A-7TG2T is a synchronous high-data-rate DRAM offering 536,870,912 bits of volatile memory organized as 4 × 8,388,608 words by 16 bits. It implements a four-bank SDRAM architecture with JEDEC-standard 3.3V supply compatibility for use in synchronous memory systems.

Targeted for high-bandwidth memory system applications, the device supports programmable burst lengths and CAS latencies, LVTTL-compatible inputs, and standard SDRAM control features to facilitate precise timing and predictable system integration.

Key Features

• Memory Architecture 536,870,912-bit SDRAM organized as 8M × 16 bits with 4 banks for concurrent bank operation.
• Synchronous Operation & Timing Inputs sampled on the positive edge of the system clock; Access time 5.4 ns and write cycle time (word/page) 14 ns; CAS latency options of 2 and 3.
• Performance Specified maximum clock frequency 143 MHz for this part number, supporting programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave).
• Interface & Control LVTTL-compatible multiplexed address pins, standard RAS/CAS/WE control, bank-addressing (BA0/BA1), DQM masking, and burst read/single-write operation.
• Power & Voltage JEDEC standard 3.3V operation with supply range 3.0 V to 3.6 V; separate VDDQ and VSSQ I/O supply pins as shown in package pinout.
• Refresh & Power Management Auto and self-refresh support with 64 ms refresh period (8K cycles) and MRS programmability.
• Package & Mounting Surface-mount 54-lead TSOP II package (400 mil × 875 mil body, 0.8 mm pitch) for compact board-level integration.
• Environmental & Qualification JEDEC-qualified design and Pb-free RoHS-compliant construction; commercial operating temperature 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory systems — Suitable as a synchronous memory element where deterministic clocked transfers and burst operation are required.
• Buffering and burst-transfer designs — Programmable burst lengths and DQM masking support burst read/write buffering and block transfers.
• Standard 3.3V SDRAM platforms — JEDEC 3.3V compatibility and LVTTL interface simplify integration into JEDEC-compliant memory subsystems.

Unique Advantages

• Four-bank organization for concurrent access — Enables interleaved bank usage to improve effective throughput for burst-oriented workloads.
• Flexible timing and burst control — CAS latency options and multiple burst lengths allow tuning for a range of synchronous memory timing requirements.
• JEDEC 3.3V compatibility — Standard supply and signaling compatibility eases system-level integration with JEDEC-conforming platforms.
• Compact surface-mount package — 54-TSOP II package supports space-constrained board designs while exposing all standard SDRAM pins for routing.
• RoHS-compliant, JEDEC-qualified — Pb-free construction and JEDEC qualification help meet regulatory and industry baseline requirements.

Why Choose M12L5121632A-7TG2T?

The M12L5121632A-7TG2T combines a large 536,870,912-bit SDRAM capacity with a four-bank, synchronous architecture and JEDEC-standard 3.3V signaling to serve a range of high-bandwidth memory system applications. Its programmable burst lengths, CAS latency options, and standard SDRAM control features make it suitable for designs that require deterministic, clocked memory transfers.

This part is well suited for engineers and procurement teams specifying JEDEC-compliant SDRAM in surface-mount 54-TSOP II format, offering predictable timing (5.4 ns access) and standard refresh/power-management behaviors for sustained operation in commercial temperature environments.

Request a quote or submit an inquiry to evaluate M12L5121632A-7TG2T for your next memory subsystem design.