M12L64164A-5TG2C

64Mb SDRAM
Part Description

SDRAM 64Mbit (1M×16 ×4 Banks) 3.3V 200MHz, 54-TSOPII

Quantity 1,140 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOPIIMemory FormatDRAMTechnologyDRAM
Memory Size64 MbitAccess Time4.5 nsGradeCommercial
Clock Frequency200 MHzVoltage3.0V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page10 nsPackaging54-TSOP II
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization1M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M12L64164A-5TG2C – SDRAM 64Mbit (1M×16 ×4 Banks) 3.3V 200MHz, 54-TSOPII

The M12L64164A-5TG2C is a synchronous DRAM device organized as 4 × 1,048,576 words by 16 bits (67,108,864 bits). It provides high-data-rate, clock-synchronous memory with a parallel interface and JEDEC-standard 3.3V power supply compatibility.

Designed for high-bandwidth, high-performance memory system applications, this commercial-grade SDRAM supports programmable burst length and CAS latency options to match a range of system timing and throughput requirements. The device is offered in a 54-lead TSOP II surface-mount package and is RoHS-compliant.

Key Features

  • Memory Organization & Capacity — 67,108,864 bits arranged as 4 × 1,048,576 × 16, giving a 1M × 16 configuration across four banks for parallel banked access.
  • Performance — Specified for up to 200 MHz operation with an access time of 4.5 ns and a write cycle time (word/page) of 10 ns, enabling synchronous high-data-rate operation.
  • Flexible Burst and Latency — Supports programmable burst lengths (1, 2, 4, 8 and full-page) and CAS latency settings of 2 and 3 to tune throughput and latency trade-offs.
  • Banked Operation — Four-bank architecture with BA0/BA1 bank select pins to enable overlapped bank activity and improved effective bandwidth.
  • Synchronous Interface & Control — All inputs sampled on the positive edge of the system clock; LVTTL-compatible with multiplexed address lines for row/column addressing.
  • Refresh and Power Management — Auto and self-refresh support with a 64 ms refresh period (4K cycle) and a 15.6 µs refresh interval; includes CKE for clock enable/power-down control.
  • Data Masking and I/O — DQM pins for data input/output masking; separate VDDQ/VSSQ power pins for output buffer noise isolation.
  • Supply and Regulatory — JEDEC-standard 3.3V supply range (3.0 V to 3.6 V) and RoHS-compliant; offered Pb-free in the 54-TSOP II variant.
  • Package and Temperature — Surface-mount 54-TSOP II package (400 mil × 875 mil body, 0.8 mm pin pitch) rated for commercial operating temperatures from 0 °C to 70 °C.

Typical Applications

  • High-bandwidth memory systems — Provides synchronous, banked DRAM organization and programmable burst modes for systems requiring sustained data throughput.
  • Performance-driven embedded designs — CAS latency and burst length programmability allow tuning to match system timing and performance objectives.
  • General-purpose commercial electronics — Commercial temperature grade and JEDEC-standard 3.3V supply make the device suitable for a wide range of commercial embedded memory uses.

Unique Advantages

  • Banked architecture for parallelism: Four internal banks enable concurrent bank operations to improve effective bandwidth for burst and pipelined accesses.
  • Programmable timing flexibility: CAS latency options and multiple burst lengths let designers optimize for latency or throughput depending on system needs.
  • Synchronous, clocked I/O: All inputs sampled on the positive clock edge for deterministic timing and straightforward system integration with synchronous controllers.
  • Robust refresh and power control: Auto/self-refresh with standard refresh intervals and CKE support help manage data integrity and power states.
  • Industry-standard electricals and packaging: JEDEC 3.3V supply range, LVTTL-compatible signaling, and a standard 54-TSOP II surface-mount package simplify BOM and board design.
  • Regulatory and environmental compliance: RoHS-compliant and offered Pb-free in the 54-TSOP II variant for regulatory alignment.

Why Choose M12L64164A-5TG2C?

The M12L64164A-5TG2C positions itself as a synchronous, high-data-rate DRAM option for commercial systems that require banked memory organization, flexible burst/latency configuration, and JEDEC-compliant 3.3V operation. Its 200 MHz rating and 1M×16 ×4-bank architecture provide designers deterministic timing and the ability to tune performance to application-level needs.

With industry-standard packaging, refresh control, and RoHS/Pb-free availability, the device fits commercial embedded designs that need scalable, predictable SDRAM behavior while maintaining standard supply and thermal profiles.

If you require pricing, availability or a quote for M12L64164A-5TG2C, request a quote or submit a product inquiry to receive detailed purchasing information and lead-time options.

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