M12L64164A-5TG2C
| Part Description |
SDRAM 64Mbit (1M×16 ×4 Banks) 3.3V 200MHz, 54-TSOPII |
|---|---|
| Quantity | 1,140 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54-TSOPII | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 4.5 ns | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 3.0V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 10 ns | Packaging | 54-TSOP II | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M12L64164A-5TG2C – SDRAM 64Mbit (1M×16 ×4 Banks) 3.3V 200MHz, 54-TSOPII
The M12L64164A-5TG2C is a synchronous DRAM device organized as 4 × 1,048,576 words by 16 bits (67,108,864 bits). It provides high-data-rate, clock-synchronous memory with a parallel interface and JEDEC-standard 3.3V power supply compatibility.
Designed for high-bandwidth, high-performance memory system applications, this commercial-grade SDRAM supports programmable burst length and CAS latency options to match a range of system timing and throughput requirements. The device is offered in a 54-lead TSOP II surface-mount package and is RoHS-compliant.
Key Features
- Memory Organization & Capacity — 67,108,864 bits arranged as 4 × 1,048,576 × 16, giving a 1M × 16 configuration across four banks for parallel banked access.
- Performance — Specified for up to 200 MHz operation with an access time of 4.5 ns and a write cycle time (word/page) of 10 ns, enabling synchronous high-data-rate operation.
- Flexible Burst and Latency — Supports programmable burst lengths (1, 2, 4, 8 and full-page) and CAS latency settings of 2 and 3 to tune throughput and latency trade-offs.
- Banked Operation — Four-bank architecture with BA0/BA1 bank select pins to enable overlapped bank activity and improved effective bandwidth.
- Synchronous Interface & Control — All inputs sampled on the positive edge of the system clock; LVTTL-compatible with multiplexed address lines for row/column addressing.
- Refresh and Power Management — Auto and self-refresh support with a 64 ms refresh period (4K cycle) and a 15.6 µs refresh interval; includes CKE for clock enable/power-down control.
- Data Masking and I/O — DQM pins for data input/output masking; separate VDDQ/VSSQ power pins for output buffer noise isolation.
- Supply and Regulatory — JEDEC-standard 3.3V supply range (3.0 V to 3.6 V) and RoHS-compliant; offered Pb-free in the 54-TSOP II variant.
- Package and Temperature — Surface-mount 54-TSOP II package (400 mil × 875 mil body, 0.8 mm pin pitch) rated for commercial operating temperatures from 0 °C to 70 °C.
Typical Applications
- High-bandwidth memory systems — Provides synchronous, banked DRAM organization and programmable burst modes for systems requiring sustained data throughput.
- Performance-driven embedded designs — CAS latency and burst length programmability allow tuning to match system timing and performance objectives.
- General-purpose commercial electronics — Commercial temperature grade and JEDEC-standard 3.3V supply make the device suitable for a wide range of commercial embedded memory uses.
Unique Advantages
- Banked architecture for parallelism: Four internal banks enable concurrent bank operations to improve effective bandwidth for burst and pipelined accesses.
- Programmable timing flexibility: CAS latency options and multiple burst lengths let designers optimize for latency or throughput depending on system needs.
- Synchronous, clocked I/O: All inputs sampled on the positive clock edge for deterministic timing and straightforward system integration with synchronous controllers.
- Robust refresh and power control: Auto/self-refresh with standard refresh intervals and CKE support help manage data integrity and power states.
- Industry-standard electricals and packaging: JEDEC 3.3V supply range, LVTTL-compatible signaling, and a standard 54-TSOP II surface-mount package simplify BOM and board design.
- Regulatory and environmental compliance: RoHS-compliant and offered Pb-free in the 54-TSOP II variant for regulatory alignment.
Why Choose M12L64164A-5TG2C?
The M12L64164A-5TG2C positions itself as a synchronous, high-data-rate DRAM option for commercial systems that require banked memory organization, flexible burst/latency configuration, and JEDEC-compliant 3.3V operation. Its 200 MHz rating and 1M×16 ×4-bank architecture provide designers deterministic timing and the ability to tune performance to application-level needs.
With industry-standard packaging, refresh control, and RoHS/Pb-free availability, the device fits commercial embedded designs that need scalable, predictable SDRAM behavior while maintaining standard supply and thermal profiles.
If you require pricing, availability or a quote for M12L64164A-5TG2C, request a quote or submit a product inquiry to receive detailed purchasing information and lead-time options.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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