M12L64164A-7T(2C)

64Mb SDRAM Ind.
Part Description

Ind. -40~85°C, SDRAM, 3.3V

Quantity 1,258 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54 TSOPII/ 54 VBGAMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5 nsGradeIndustrial
Clock Frequency143 MHzVoltage2.5VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page14 nsPackaging54 TSOPII/ 54 VBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M12L64164A-7T(2C) – Ind. -40~85°C, SDRAM, 3.3V

The M12L64164A-7T(2C) is an industrial-grade synchronous DRAM (SDRAM) organized as 4M × 16 with 4 internal banks, providing 67.11 Mbit of volatile memory in a parallel interface. It is designed for deployment in industrial and embedded systems that require deterministic, clock-synchronized memory access and extended temperature operation.

This device delivers configurable burst lengths and CAS latencies for flexible timing, while JEDEC qualification and surface-mount package options simplify integration into rugged designs that demand reliable memory buffering and high-bandwidth data transactions.

Key Features

  • Memory Architecture 67.11 Mbit SDRAM organized as 4M × 16 with four-bank operation for interleaved access and higher effective bandwidth.
  • Synchronous Operation & Timing Synchronous DRAM with inputs sampled on the positive clock edge; supports CAS latencies 2 and 3, programmable burst lengths (1, 2, 4, 8, full page) and burst types (sequential & interleave).
  • Performance Specified clock frequency up to 143 MHz with an access time of 5 ns and a write cycle (word page) time of 14 ns to support high-throughput memory operations.
  • Interface & Control Parallel DQ0–DQ15 data interface with DQM for data masking, multiplexed address pins (RA0–RA11 / CA0–CA7), BA0/BA1 bank select and standard SDRAM command signals (CLK, RAS, CAS, WE, CKE, CS).
  • Refresh & Power Management Supports auto and self-refresh with a 64 ms refresh period (4K cycles) and a 15.6 µs refresh interval to maintain data integrity in typical SDRAM refresh schemes.
  • Voltage & Qualification Product specification lists a 2.5 V supply; device family is JEDEC-qualified for standard SDRAM operation.
  • Industrial Grade & Temperature Range Rated for industrial operation from −40 °C to 85 °C, suitable for use in temperature-challenging environments.
  • Packaging & Mounting Available in surface-mount packages: 54-lead TSOP II and 54-ball VBGA options to match PCB layout and assembly needs.
  • Compliance RoHS-compliant material specification for environmental and regulatory compatibility.

Typical Applications

  • Industrial Control Systems Memory buffering and working storage in controllers and PLCs where extended temperature range (−40 °C to 85 °C) and JEDEC qualification are required.
  • Embedded Systems On-board SDRAM for embedded processors and DSPs that require synchronous, parallel-access memory with configurable burst and latency settings.
  • Networking & Communications Equipment High-throughput packet buffering and temporary data storage leveraging the device's 4-bank architecture and 143 MHz clock capability.

Unique Advantages

  • Extended Temperature Rating: Operates from −40 °C to 85 °C, enabling reliable deployment in industrial and harsh-environment applications.
  • Flexible Timing Configuration: Programmable CAS latency and burst length options allow designers to match memory timing to system performance and latency requirements.
  • JEDEC-Qualified Design: Conformance to JEDEC SDRAM conventions simplifies integration with standard memory controllers and system designs.
  • Package Choice for Assembly: Offered in 54 TSOP II and 54 VBGA surface-mount packages to support varying board-space and thermal considerations.
  • Refresh & Power Features: Auto/self-refresh and standard refresh intervals reduce system overhead for data retention management.
  • Regulatory Compliance: RoHS compliance supports environmental and supply-chain requirements.

Why Choose M12L64164A-7T(2C)?

The M12L64164A-7T(2C) positions itself as a robust SDRAM option for industrial and embedded designs that need synchronous, parallel memory with configurable timing and reliable operation across a wide temperature range. Its 4-bank architecture, JEDEC qualification, and surface-mount packaging options make it suitable for systems requiring predictable timing, flexible burst behavior, and compact board-level integration.

Designers targeting industrial controllers, embedded platforms, or communications equipment will find the device's combination of timing flexibility, refresh management, and temperature rating beneficial for long-term system reliability and straightforward integration into established memory-controller ecosystems.

Request a quote or submit an inquiry to receive pricing and availability information for the M12L64164A-7T(2C).

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay

    Date Founded: 1998


    Headquarters: Hsinchu Science Park, Hsinchu, Taiwan


    Employees: 400+


    Revenue: $377.8 Million


    Certifications and Memberships: N/A


    Featured Products
    Latest News
    keyboard_arrow_up