M12L64164A-7T(2C)
| Part Description |
Ind. -40~85°C, SDRAM, 3.3V |
|---|---|
| Quantity | 1,258 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54 TSOPII/ 54 VBGA | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 14 ns | Packaging | 54 TSOPII/ 54 VBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M12L64164A-7T(2C) – Ind. -40~85°C, SDRAM, 3.3V
The M12L64164A-7T(2C) is an industrial-grade synchronous DRAM (SDRAM) organized as 4M × 16 with 4 internal banks, providing 67.11 Mbit of volatile memory in a parallel interface. It is designed for deployment in industrial and embedded systems that require deterministic, clock-synchronized memory access and extended temperature operation.
This device delivers configurable burst lengths and CAS latencies for flexible timing, while JEDEC qualification and surface-mount package options simplify integration into rugged designs that demand reliable memory buffering and high-bandwidth data transactions.
Key Features
- Memory Architecture 67.11 Mbit SDRAM organized as 4M × 16 with four-bank operation for interleaved access and higher effective bandwidth.
- Synchronous Operation & Timing Synchronous DRAM with inputs sampled on the positive clock edge; supports CAS latencies 2 and 3, programmable burst lengths (1, 2, 4, 8, full page) and burst types (sequential & interleave).
- Performance Specified clock frequency up to 143 MHz with an access time of 5 ns and a write cycle (word page) time of 14 ns to support high-throughput memory operations.
- Interface & Control Parallel DQ0–DQ15 data interface with DQM for data masking, multiplexed address pins (RA0–RA11 / CA0–CA7), BA0/BA1 bank select and standard SDRAM command signals (CLK, RAS, CAS, WE, CKE, CS).
- Refresh & Power Management Supports auto and self-refresh with a 64 ms refresh period (4K cycles) and a 15.6 µs refresh interval to maintain data integrity in typical SDRAM refresh schemes.
- Voltage & Qualification Product specification lists a 2.5 V supply; device family is JEDEC-qualified for standard SDRAM operation.
- Industrial Grade & Temperature Range Rated for industrial operation from −40 °C to 85 °C, suitable for use in temperature-challenging environments.
- Packaging & Mounting Available in surface-mount packages: 54-lead TSOP II and 54-ball VBGA options to match PCB layout and assembly needs.
- Compliance RoHS-compliant material specification for environmental and regulatory compatibility.
Typical Applications
- Industrial Control Systems Memory buffering and working storage in controllers and PLCs where extended temperature range (−40 °C to 85 °C) and JEDEC qualification are required.
- Embedded Systems On-board SDRAM for embedded processors and DSPs that require synchronous, parallel-access memory with configurable burst and latency settings.
- Networking & Communications Equipment High-throughput packet buffering and temporary data storage leveraging the device's 4-bank architecture and 143 MHz clock capability.
Unique Advantages
- Extended Temperature Rating: Operates from −40 °C to 85 °C, enabling reliable deployment in industrial and harsh-environment applications.
- Flexible Timing Configuration: Programmable CAS latency and burst length options allow designers to match memory timing to system performance and latency requirements.
- JEDEC-Qualified Design: Conformance to JEDEC SDRAM conventions simplifies integration with standard memory controllers and system designs.
- Package Choice for Assembly: Offered in 54 TSOP II and 54 VBGA surface-mount packages to support varying board-space and thermal considerations.
- Refresh & Power Features: Auto/self-refresh and standard refresh intervals reduce system overhead for data retention management.
- Regulatory Compliance: RoHS compliance supports environmental and supply-chain requirements.
Why Choose M12L64164A-7T(2C)?
The M12L64164A-7T(2C) positions itself as a robust SDRAM option for industrial and embedded designs that need synchronous, parallel memory with configurable timing and reliable operation across a wide temperature range. Its 4-bank architecture, JEDEC qualification, and surface-mount packaging options make it suitable for systems requiring predictable timing, flexible burst behavior, and compact board-level integration.
Designers targeting industrial controllers, embedded platforms, or communications equipment will find the device's combination of timing flexibility, refresh management, and temperature rating beneficial for long-term system reliability and straightforward integration into established memory-controller ecosystems.
Request a quote or submit an inquiry to receive pricing and availability information for the M12L64164A-7T(2C).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A