M12L64322A-5BG2S

The M12L64322A-5BG2S from ESMT is a synchronous DRAM device organized as 4 × 524,288 words by 32 bits (67,108,864 bits). It implements a four-bank SDRAM architecture with synchronous, clocked I/O for predictable cycle control and high data throughput at up to 200 MHz.

Designed for high-bandwidth, high-performance memory subsystems, this JEDEC-qualified, RoHS-compliant SDRAM offers programmable burst lengths and latencies, on-chip refresh options and a compact 90‑BGA surface-mount package for space-constrained designs operating on 3.0–3.6 V.

Key Features

• Memory Organization 4 × 524,288 words by 32 bits (67,108,864 bits) supporting parallel memory interface and banked operation for concurrent access patterns.
• Performance Maximum clock frequency 200 MHz with access time specified at 4.5 ns and write cycle time (word/page) at 10 ns, enabling synchronous transfers on each clock edge.
• SDRAM Core Functionality Four banks operation, programmable CAS latency (2 and 3), selectable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential & interleave) for flexible data sequencing.
• Interface & Control LVTTL-compatible inputs with multiplexed address lines (A0–A10), bank address pins (BA0/BA1), DQM masking, and standard control signals (CLK, CKE, CS, RAS, CAS).
• Refresh & Power Management Auto and self-refresh support with a 64 ms refresh period (4K cycle) and clock-enable (CKE) control to freeze operation for low-power states.
• Voltage & Compliance JEDEC standard 3.3 V supply operation with acceptable supply range of 3.0 V to 3.6 V; RoHS‑compliant and JEDEC-qualified device grade (commercial).
• Package & Temperature Surface-mount 90‑BGA package (0.8 mm ball pitch, 8 mm × 13 mm × 1 mm body per datasheet) and operating temperature range 0 °C to 70 °C.

Typical Applications

• High‑bandwidth memory subsystems Use where synchronous DRAM with banked architecture and programmable bursts are required to sustain continuous data streams.
• Embedded systems Integration into compact, surface-mount board designs that need a JEDEC‑compliant 3.3 V SDRAM in a 90‑BGA package.
• High-performance controllers and modules Paired with systems that take advantage of CAS latency tuning, burst modes and DQM masking for selective data writes and reads.

Unique Advantages

• Banked SDRAM architecture Four independent banks (4 × 524,288 × 32) allow overlapping transactions and improved effective throughput for bursty access patterns.
• Flexible timing and burst control Programmable CAS latency (2/3), multiple burst lengths and burst types let designers match memory timing to system requirements.
• Synchronous operation at 200 MHz Enables predictable, clocked I/O for designs that require precise cycle control and high data rates.
• JEDEC compliance and RoHS status Conforms to JEDEC 3.3 V SDRAM standards and is RoHS‑compliant, simplifying qualification in JEDEC-oriented designs.
• Compact BGA package 90‑BGA surface-mount package minimizes board area while providing the I/O density needed for 32‑bit data paths and related control signals.
• On-chip refresh and masking Auto/self-refresh and DQM masking reduce external refresh management and enable selective write masking for robust data handling.

Why Choose M12L64322A-5BG2S?

The M12L64322A-5BG2S delivers a JEDEC‑standard 3.3 V SDRAM solution with four-bank organization, flexible burst and latency options, and synchronous operation to support high-bandwidth memory applications. Its 90‑BGA surface-mount package and commercial operating range make it suitable for space-constrained, performance-focused designs that require predictable clocked transfers and standard SDRAM feature sets.

This device is appropriate for engineering teams building memory subsystems or modules where JEDEC compliance, programmable timing and compact packaging reduce design complexity and support long-term integration into product families backed by ESMT product documentation.

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