M12L64322A-6TG2S

The M12L64322A-6TG2S is a synchronous high data rate DRAM organized as 4 × 524,288 words by 32 bits for a total of 67,108,864 bits. Designed for synchronous, clocked operation, this device provides predictable cycle timing and flexible burst operation for high-bandwidth memory subsystems.

Targeted for high-performance memory system applications, the device delivers JEDEC-standard 3.3V operation, LVTTL-compatible inputs, and an 86-TSOP II surface-mount package for compact board-level integration.

Key Features

• Synchronous DRAM architecture All inputs are sampled on the positive edge of the system clock for precise cycle control and predictable timing.
• Memory organization 67,108,864 bits total, organized as 4 × 524,288 × 32 with four-bank operation to support interleaving and high throughput.
• Performance Rated for up to 166 MHz operation with an access time of 5.4 ns and a write cycle time (word/page) of 12 ns.
• Programmable burst and latency Supports CAS latency options (2 & 3) and programmable burst lengths (1, 2, 4, 8 and full page) with sequential and interleave burst types.
• Power and signaling JEDEC standard 3.3V power supply (operating range 3.0 V to 3.6 V) and LVTTL-compatible multiplexed address inputs.
• Refresh and power management Auto and self-refresh capability with a 64 ms refresh period (4K cycle) to maintain data integrity.
• I/O control and masking DQM supports masking; burst read with single-bit write operation is supported.
• Package and mounting Surface-mount 86-TSOP II package for compact PCB layout and reliable board assembly.
• Commercial grade and qualification JEDEC-qualified device with RoHS-compliant, lead-free construction.
• Operating temperature Specified for commercial operation from 0 °C to 70 °C.

Typical Applications

• High-performance memory subsystems — Used where synchronous, clocked DRAM with programmable burst and latency is required for predictable throughput.
• Consumer and industrial electronics — Provides compact, surface-mount high-density memory for devices that require 3.3V SDRAM integration.
• Graphics and buffering — Suitable for buffering and frame storage tasks that benefit from multi-bank operation and programmable burst modes.

Unique Advantages

• Synchronous operation for precise timing: Positive-edge clock sampling enables deterministic cycle control for system-level timing.
• Flexible throughput options: CAS latency options and multiple burst lengths support tuning for performance and system requirements.
• Multi-bank organization: Four-bank architecture (4 × 524,288 × 32) allows interleaving and improved effective bandwidth.
• JEDEC-standard power and signaling: 3.3V JEDEC compliance and LVTTL-compatible inputs simplify system design and interfacing.
• Compact, surface-mount package: 86-TSOP II package enables high-density board layouts while maintaining manufacturability.
• Industry-standard qualification and RoHS compliance: JEDEC-qualified and lead-free construction support standard manufacturing and environmental requirements.

Why Choose M12L64322A-6TG2S?

The M12L64322A-6TG2S positions itself as a dependable synchronous DRAM option for designs that require predictable, clock-driven memory performance and flexible burst/latency configuration. With JEDEC-standard 3.3V operation, multi-bank organization, and a compact 86-TSOP II surface-mount package, it is suitable for engineers specifying high-bandwidth memory subsystems in consumer and industrial equipment.

Its combination of programmable timing, refresh management, and standard qualification makes it a practical choice for teams seeking a scalable, standards-based DRAM component from the M12L64322A series.

Request a quote or contact sales to discuss availability, pricing, and lead times for the M12L64322A-6TG2S.