M13D64322A-4.5BG2S

64Mb LPDDR SDRAM
Part Description

LPDDR SDRAM 64Mbit (512K×32) 1.8V 222MHz 144-Ball FBGA

Quantity 1,172 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package144-FBGA (12x12)Memory FormatDRAMTechnologyDRAM
Memory Size64 MbitAccess Time5 nsGradeCommercial
Clock Frequency222 MHzVoltage1.7V ~ 1.95VMemory TypeVolatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page15 nsPackaging144-UFBGA, FCBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512K x 32
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M13D64322A-4.5BG2S – LPDDR SDRAM 64Mbit (512K×32) 1.8V 222MHz 144-Ball FBGA

The M13D64322A-4.5BG2S is a commercial-grade Low Power DDR (LPDDR) SDRAM device in a compact 144-ball FBGA package. It implements an internal pipelined double-data-rate architecture with bi-directional data strobes and four-bank operation to deliver DDR data throughput at a 222 MHz maximum clock.

Designed for low-voltage systems, this device operates from 1.7 V to 1.95 V and provides a 512K × 32 memory organization (67.11 Mbit), making it suitable for commercial designs that require compact, JEDEC-standard LPDDR memory in a surface-mount FBGA footprint.

Key Features

  • Memory Organization and Density – 512K × 32 organization delivering 67.11 Mbit of volatile DRAM memory capacity.
  • DDR Architecture – Internal pipelined double-data-rate architecture supports two data accesses per clock cycle with bi-directional DQS and differential clock inputs.
  • Performance – Rated for up to 222 MHz clock frequency with access time of 5 ns and write cycle time (word/page) of 15 ns.
  • CAS Latency & Burst Options – Supports CAS latency 2 and 3; burst types sequential and interleave with burst lengths of 2, 4, 8, 16 and full page.
  • Low-Voltage Operation – VDD and VDDQ operating range from 1.7 V to 1.95 V supports lower-power system designs.
  • Power Management – Deep Power Down (DPD) mode plus auto and self-refresh support with a 15.6 μs refresh interval (64 ms refresh period, 4K cycle).
  • Interface and Control – LVCMOS-compatible inputs; data mask (DM) for write masking and support for drive-strength control (DS).
  • Package and Mounting – 144‑ball UFBGA / FCBGA (12 mm × 12 mm body, 0.8 mm ball pitch) for surface-mount PCB assembly.
  • Qualification & Compliance – JEDEC standard device and RoHS compliant; commercial grade operating range 0 °C to 70 °C.

Typical Applications

  • Commercial low-voltage memory designs – Use where 1.8 V-class LPDDR is required with JEDEC compatibility and compact packaging.
  • Space-constrained PCB layouts – 144-ball FBGA (12×12 mm) package provides a small footprint for dense board designs.
  • Systems requiring DDR throughput – Suitable where double-data-rate transfers, selectable CAS latencies and multiple burst lengths are needed.
  • Power-sensitive applications – Low VDD/VDDQ range and Deep Power Down support help reduce standby and active power consumption.

Unique Advantages

  • Low-voltage flexibility: 1.7 V to 1.95 V operation enables compatibility with 1.8 V-class power rails to lower system power draw.
  • DDR performance in a compact package: Double-data-rate architecture and a 144-ball FBGA footprint balance throughput and board area efficiency.
  • Multiple timing and burst options: CAS latency 2/3 and burst lengths up to full page allow designers to tune latency and throughput to system needs.
  • Robust refresh and power modes: Auto/self-refresh and Deep Power Down mode provide reliable data retention and power savings strategies.
  • Standards-based qualification: JEDEC standard compliance and RoHS conformance simplify integration into commercial product flows.

Why Choose M13D64322A-4.5BG2S?

The M13D64322A-4.5BG2S delivers a balanced combination of density, DDR throughput and low-voltage operation in a compact 144-ball FBGA package. Its JEDEC-standard LPDDR architecture, selectable CAS latencies, and multiple burst lengths make it a practical choice for commercial designs that need configurable DDR performance with efficient power management.

This device is suited for engineers and procurement teams designing space-constrained, power-aware systems that require a verified LPDDR memory block with surface-mount packaging and commercial temperature qualification.

Request a quote or submit an inquiry to purchase the M13D64322A-4.5BG2S and include your required order quantity and delivery timeline for pricing and availability details.

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