M13D64322A-4BG2S

The M13D64322A-4BG2S is a Low Power DDR (LPDDR) SDRAM device organized as 512K×32 with four internal banks and JEDEC-standard operation. Its internal pipelined double-data-rate architecture provides two data accesses per clock cycle, and the device supports standard LPDDR signaling and power modes for low-voltage memory applications.

Key operating parameters include a maximum clock frequency of 250 MHz, supply voltage range of 1.7 V to 1.95 V, and an ambient operating temperature range of 0 °C to 70 °C. The device is supplied in a 144-ball FBGA (12 mm × 12 mm) package and is RoHS compliant.

Key Features

• Core & Architecture Internal pipelined double-data-rate architecture enabling two data accesses per clock cycle; four-bank operation supports concurrent bank activity.
• Memory & Organization Organized as 512K × 32 (64 Mbit nominal) with four banks and support for burst lengths of 2, 4, 8, 16 and full-page transfers.
• Performance Rated for up to 250 MHz operation; CAS latency options of 2 and 3 provide selectable read timing trade-offs for system designers.
• Power Management Low-voltage operation with VDD and VDDQ in the range 1.7 V to 1.95 V. Supports Auto & Self Refresh and Deep Power Down (DPD) mode to reduce standby power.
• Interface & Signaling Differential clock inputs (CLK, CLK̄) with bi-directional data strobe (DQS). All inputs except data and DM are sampled at the rising edge of CLK; DQS is edge-aligned for READ and center-aligned for WRITE operations.
• Refresh & Timing JEDEC refresh scheme with a 15.6 μs refresh interval (64 ms refresh period, 4K cycle). Typical access time is 5 ns with a write cycle time (word page) of 15 ns as listed in device specifications.
• Package & Thermal 144-ball FBGA (12 mm × 12 mm) with 0.8 mm ball pitch and 1.4 mm body thickness; surface-mount package suitable for high-density PCB designs. Operating temperature: 0 °C to 70 °C.
• Standards & Compliance JEDEC-standard LPDDR device and RoHS-compliant.

Unique Advantages

• Low-voltage operation: VDD/VDDQ range of 1.7 V to 1.95 V supports reduced power consumption and integration into low-power memory subsystems.
• Double-data-rate throughput: Two data transfers per clock cycle plus support for up to 250 MHz clocking enable efficient data movement for memory-intensive operations.
• Flexible timing modes: CAS latency options (2, 3) and multiple burst lengths allow designers to tune latency and throughput to application needs.
• Power-saving modes: Auto & Self Refresh and Deep Power Down mode help minimize standby energy use in power-sensitive designs.
• Compact BGA footprint: 144-ball FBGA (12×12 mm) package offers a dense, surface-mount form factor for space-constrained PCBs.
• JEDEC compatibility: Adherence to JEDEC LPDDR standards simplifies system integration and interoperability with compliant memory controllers.

Why Choose M13D64322A-4BG2S?

The M13D64322A-4BG2S provides a standards-based LPDDR SDRAM option that combines low-voltage operation, DDR pipelined architecture, and compact FBGA packaging. With selectable CAS latencies, multiple burst lengths, and built-in low-power modes including Deep Power Down, it offers practical timing and power control for designs that require efficient, low-voltage DRAM.

This device is suited to designs requiring JEDEC-standard LPDDR memory in a high-density BGA package with straightforward signal and refresh behavior. Its documented electrical and timing characteristics and RoHS compliance support maintainable, production-ready memory subsystems.

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