M13S128168A-4BG2S

The M13S128168A-4BG2S is a commercial-grade DDR SDRAM device from ESMT, offered in a compact 60-ball BGA package for surface-mount applications. It implements a double-data-rate architecture with 2M × 16 organization and is rated for 250 MHz operation (listed as 250MHz / DDR500).

Designed for systems requiring parallel high-speed DRAM, this device provides flexible timing and burst options, JEDEC qualification, and a commercial operating range to support a broad set of memory applications where a 128Mbit-class DDR SDRAM is required.

Key Features

• DDR architecture Double-data-rate operation with two data transfers per clock cycle to increase throughput relative to single-rate SDRAM.
• Memory organization 2M × 16 organization providing a 128Mbit-class device; specification lists 134.2 Mbit.
• Frequency and timing Rated for 250 MHz operation (DDR500), with typical access time of 10 ns and write-cycle time (word/page) of 15 ns.
• Banking and burst Four-bank operation with selectable burst lengths (2, 4, 8) and burst types (sequential, interleave) for flexible data transfers.
• Programmable latency and interface timing CAS latency options of 2, 2.5 and 3; all command inputs (except data and DM) sampled on the rising edge of CLK.
• Data integrity and timing alignment Bi-directional data strobe (DQS) with DQS edge-aligned for READ and center-aligned for WRITE operations; DLL aligns DQ/DQS with CLK.
• SSTL_2 compatible I/O and supply VDD and VDDQ at 2.5 V ±0.2 V (specified voltage range 2.3 V to 2.7 V), supporting standard SSTL_2 signaling.
• Refresh and low-power modes 15.6 μs refresh interval with Auto and Self Refresh support to maintain data integrity.
• Package and mounting 60-ball BGA (surface mount) package for compact board-level integration; commercial operating temperature 0 °C to 70 °C.
• Qualification and compliance JEDEC qualification and RoHS-compliant manufacturing.

Typical Applications

• Commercial systems Commercial-grade DDR memory for systems and products operating within 0 °C to 70 °C that require a 2M × 16 DDR SDRAM device.
• High-speed parallel memory interfaces Use where a parallel DDR interface at 250 MHz and burst transfer capability is needed to support memory bandwidth requirements.
• Space-constrained board designs 60-ball BGA surface-mount package enables dense PCB layouts and compact module designs.

Unique Advantages

• High data throughput: DDR architecture and 250 MHz rating (DDR500) deliver doubled data transfers per clock for increased memory bandwidth.
• Flexible performance tuning: Multiple CAS latency settings (2 / 2.5 / 3) and selectable burst lengths allow designers to balance latency and throughput.
• Robust timing alignment: DLL and bi-directional DQS alignment improve signal timing and help simplify board-level timing design.
• Compact board footprint: 60-BGA surface-mount package supports compact layouts and higher component density.
• Standard supply and signaling: 2.5 V ±0.2 V VDD/VDDQ and SSTL_2-compatible I/O make the part suitable for systems using common DDR signaling conventions.
• JEDEC-qualified and RoHS-compliant: Qualification and environmental compliance provide verified baseline reliability and manufacturing standards.

Why Choose M13S128168A-4BG2S?

The M13S128168A-4BG2S is positioned for designers needing a compact, JEDEC-qualified DDR SDRAM device with flexible timing, four-bank operation, and high-data-rate capability at 250 MHz (DDR500). Its 2M × 16 organization and selectable CAS/burst options make it suitable for a range of commercial memory applications where predictable timing and compact packaging matter.

Backed by ESMT documentation and manufactured to RoHS standards, this device provides a stable platform for commercial system designs that require a durable DDR SDRAM solution with standard 2.5 V supply and SSTL_2-compatible I/O.

Request a quote or submit an order inquiry to procure M13S128168A-4BG2S for your next design or production run.