M13S128168A-6BG2S

The M13S128168A-6BG2S is a commercial-grade DDR SDRAM device from ESMT, organized as 2M × 16 with a listed density of 128 Mbit and a MemorySize entry of 134.2 Mbit. It implements double-data-rate architecture with four internal banks and is optimized for parallel memory interfaces that require 2.5V SSTL_2-compatible signaling.

With a 166 MHz clock rating, 15 ns access and write cycle timing, and a compact 60-ball BGA surface-mount package, this device targets compact board-level memory expansion in commercial electronic systems operating between 0 °C and 70 °C.

Key Features

• DDR double-data-rate architecture Two data transfers per clock cycle for increased effective bandwidth over single-rate DRAM.
• Memory organization & capacity 2M × 16 organization with a listed part density of 128 Mbit and a MemorySize entry of 134.2 Mbit.
• Performance & timing 166 MHz clock frequency rating with 15 ns access time and 15 ns write cycle time (word/page).
• Advanced I/O and timing features Bi-directional data strobes (LDQS/UDQS), differential clock inputs, on‑die DLL for DQ/DQS alignment, and DQS edge/center alignment for READ/WRITE operations.
• Flexible burst and latency options CAS latency selectable at 2, 2.5, or 3 with Burst Length options of 2, 4, or 8 and both Sequential and Interleave burst types.
• Write masking and refresh Data mask (DM) for write masking; 15.6 µs refresh interval plus Auto and Self refresh modes.
• Supply and interface compatibility VDD / VDDQ = 2.5V ± 0.2V (spec range 2.3 V to 2.7 V) and SSTL_2-compatible signaling with VREF support.
• Package & mounting 60-ball BGA surface-mount package (BGA60), body 8 mm × 13 mm × 1.2 mm, 0.8 mm ball pitch—compact form factor for space-constrained PCBs.
• Commercial grade and compliance JEDEC-qualified device with RoHS compliance and an operating ambient temperature range of 0 °C to 70 °C.

Typical Applications

• Systems using SSTL_2 memory interfaces For designs that require a 2.5V SSTL_2-compatible DDR SDRAM with 2M×16 organization and standard DQ/DQS timing behavior.
• Board-level memory expansion in commercial electronics Compact 60-BGA package and surface-mount mounting make the device suitable for space-constrained commercial PCBs operating within 0 °C to 70 °C.
• Parallel-memory designs requiring predictable timing 166 MHz clock rating, 15 ns access/write timing, selectable CAS latencies, and burst options support deterministic memory timing requirements.

Unique Advantages

• SSTL_2 compatibility: Native 2.5V VDD/VDDQ with VREF support for direct integration into SSTL_2 memory interfaces.
• Configurable performance: Multiple CAS latency and burst length options let designers balance latency and throughput to match system requirements.
• On-die DLL and DQS alignment: DLL alignment of DQ/DQS and defined DQS read/write alignment reduce timing margin complexity at system level.
• Compact BGA footprint: 60-ball BGA (8 mm × 13 mm × 1.2 mm, 0.8 mm pitch) enables higher-density board layout and simplified surface-mount assembly.
• Commercial-grade reliability: JEDEC qualification and RoHS compliance with standard operating range (0 °C to 70 °C) for commercial deployments.

Why Choose M13S128168A-6BG2S?

The M13S128168A-6BG2S combines DDR double-data-rate operation, selectable latency/burst modes, and SSTL_2-compatible signaling in a compact 60-ball BGA package, providing a practical memory building block for commercial PCB designs. Its 166 MHz rating, 15 ns timing characteristics, and four-bank architecture provide a predictable memory subsystem for parallel-interface applications.

Manufactured by ESMT and JEDEC-qualified, this device is suited to engineers and procurement teams designing or sourcing commercial-grade DDR SDRAM for compact, board-level memory expansion where standard DDR timing, 2.5V signaling, and surface-mount BGA packaging are required.

Request a quote or submit an inquiry to procure M13S128168A-6BG2S for your next commercial DDR memory design.