M13S128168A-4TG2S

The M13S128168A-4TG2S is a DDR SDRAM device organized as 2M × 16 with a memory size of 134.2 Mbit and rated for 250 MHz operation. It implements a double-data-rate architecture with four internal banks and SSTL_2-compatible I/O to support synchronous, high-throughput parallel memory interfaces.

Engineered for commercial-temperature systems, this surface-mount 66‑pin TSOPII package provides JEDEC-level qualification and RoHS compliance, making it suitable for designs that require JEDEC-standard DDR timing, refresh control and a compact TSOPII footprint.

Key Features

• DDR Double-Data-Rate Architecture Two data transfers per clock cycle with bi-directional data strobe (DQS) and differential clock inputs (CLK and CLK̅).
• Memory Organization & Capacity Organized as 2M × 16 with a total memory size of 134.2 Mbit and four internal banks for concurrent bank operation.
• Performance & Timing Rated clock frequency up to 250 MHz with access time of 10 ns and write cycle time (word/page) of 15 ns. CAS Latency options: 2, 2.5 and 3; burst lengths 2, 4 and 8; sequential and interleave burst types.
• Signal Integrity & Timing Control DLL aligns DQ and DQS transitions to CLK; DQS is edge-aligned for reads and center-aligned for writes, and data I/O transitions on both edges of DQS.
• Power & I/O Supply voltage specified at 2.3 V to 2.7 V (VDD/VDDQ = 2.5 V ±0.2 V). I/O is SSTL_2 compatible for standard DDR signaling.
• Refresh & Power Management 15.6 μs refresh interval with support for auto and self-refresh modes.
• Package & Mounting 66‑pin TSOPII surface-mount package (66‑TSOPII) with commercial operating temperature range 0 °C to 70 °C.
• Standards & Compliance JEDEC qualification and RoHS compliance as stated in the product data.

Typical Applications

• System Memory Expansion: Use as DDR SDRAM for designs requiring a 2M × 16 memory organization and up to 250 MHz DDR operation.
• Embedded DDR Subsystems: Suitable for embedded boards and modules that require JEDEC-standard DDR timing, refresh control and SSTL_2 I/O signaling.
• Compact Board-Level Designs: TSOPII 66-pin surface-mount footprint supports space-constrained applications that require standard DDR SDRAM connectivity.

Unique Advantages

• DDR data throughput: Double-data-rate transfers and bi-directional DQS enable data operations on both clock edges, supporting higher effective bandwidth at the rated 250 MHz clock.
• Flexible timing configuration: Multiple CAS latency options (2, 2.5, 3) and selectable burst lengths allow tuning for system timing and performance trade-offs.
• SSTL_2-compatible I/O: 2.5 V I/O signaling (VDDQ = 2.5 V ±0.2 V) simplifies integration into standard DDR signaling domains.
• Standard JEDEC compliance: JEDEC-qualified memory behavior and refresh timing (15.6 μs) simplify system-level memory management and design validation.
• Commercial-temperature TSOPII package: Surface-mount 66‑TSOPII package provides a compact, board-ready form factor for commercial systems operating from 0 °C to 70 °C.
• RoHS-compliant manufacturing: Meets RoHS requirements for lead-free assembly and environmental compliance.

Why Choose M13S128168A-4TG2S?

The M13S128168A-4TG2S delivers JEDEC-compatible DDR SDRAM functionality with a 2M × 16 organization, 134.2 Mbit capacity and support for up to 250 MHz clock operation in a compact 66‑pin TSOPII surface-mount package. Its DDR architecture, DLL timing alignment and multiple CAS latency and burst modes make it well suited to designs that require standard DDR signaling and configurable timing behavior.

With a commercial operating range (0 °C to 70 °C), SSTL_2-compatible I/O and RoHS compliance, this device addresses system designs that need verified DDR timing, refresh control and a compact board-level memory option backed by manufacturer datasheet specifications.

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