M13D64322A-5BG2S

The M13D64322A-5BG2S is a low-power DDR SDRAM device organized as 512K × 32 (64Mbit / 67.11 Mbit) that implements an internal pipelined double-data-rate architecture to deliver two data accesses per clock cycle. It operates from 1.7V to 1.95V (nominal 1.8V) at a maximum frequency of 200 MHz and is provided in a compact 144-ball FBGA surface-mount package.

Designed for systems that require low-voltage, high-throughput volatile memory in a small footprint, this device offers flexible burst modes, multiple power-saving states and JEDEC-standard compatibility for predictable integration.

Key Features

• Core / Architecture Internal pipelined double-data-rate architecture enabling two data transfers per clock cycle; four-bank operation for improved throughput.
• Memory Organization 512K × 32 organization (listed as 64Mbit; 67.11 Mbit in specifications) with support for full-page and selectable burst lengths (2, 4, 8, 16 and full page).
• Performance 200 MHz maximum clock frequency (part variant -5BG2S); CAS latency options of 2 and 3, 5 ns access time and 15 ns write cycle time for word page operations.
• Low-Voltage Operation VDD and VDDQ supply range 1.7V to 1.95V (nominal 1.8V) to support low-power system designs and reduced power dissipation.
• Power Management Supports Deep Power Down (DPD) mode, auto and self-refresh functions and a 15.6 µs refresh interval (64 ms refresh period with 4K cycles).
• Data Integrity & Timing Bi-directional data strobe (DQS) with read edge-aligned and write center-aligned DQS timing; Data Mask (DM) for write masking.
• Interfaces Differential clock inputs (CLK and CLK̅), LVCMOS-compatible inputs, and a parallel memory interface with DQ0–DQ31, DQS0–DQS3 and DM0–DM3 signals.
• Package & Mounting 144-ball FBGA (12 mm × 12 mm × 1.4 mm body, 0.8 mm ball pitch), surface-mount package suitable for compact PCB designs.
• Standards & Compliance JEDEC-standard LPDDR SDRAM behavior and RoHS compliance as listed in the product data.
• Operating Range Commercial-grade operating temperature 0 °C to 70 °C.

Typical Applications

• Low-power embedded systems — Provides volatile working memory for designs that require reduced supply voltage and compact package size.
• Handheld and portable devices — Compact 144-ball FBGA package and low-voltage operation help reduce board area and power consumption in space-constrained designs.
• Consumer electronics — Use as high-speed transient storage with selectable burst lengths and CAS latency options for efficient data handling.

Unique Advantages

• Low-voltage operation: Operates from 1.7V to 1.95V (nominal 1.8V), enabling lower system power budgets.
• DDR throughput in a small footprint: Double-data-rate architecture at up to 200 MHz combined with a 12 mm × 12 mm FBGA package minimizes PCB area while maintaining performance.
• Flexible timing and burst options: CAS latency 2/3 and multiple burst lengths (2/4/8/16/full page) allow designers to tune performance vs. latency for target workloads.
• Power-saving modes: Deep Power Down and self-refresh support help reduce standby power in battery-powered or energy-conscious systems.
• JEDEC compatibility: JEDEC-standard operation simplifies integration into established memory controllers and design flows.
• Robust signal timing: DQS read edge-aligned and write center-aligned timing with data mask support improves reliable data transfers across the 32-bit data bus.

Why Choose M13D64322A-5BG2S?

The M13D64322A-5BG2S positions itself as a compact, JEDEC-standard LPDDR SDRAM device for designs that require low-voltage operation, selectable DDR performance, and a small surface-mount FBGA footprint. Its combination of double-data-rate architecture, multiple power-saving modes and flexible timing options makes it suitable for engineers targeting reduced power consumption without sacrificing throughput.

This device is well suited for teams designing compact, cost-sensitive systems that need predictable JEDEC behavior, straightforward integration via standard signaling (CLK/CLK̅, DQS, DM) and commercial-grade temperature operation.

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