M13S128168A-4.5TG2S

The M13S128168A-4.5TG2S is a commercial-grade DDR SDRAM device organized as 2M × 16 bits (134.2 Mbit total) with a maximum operating frequency of 225 MHz. It implements a double-data-rate architecture with four internal banks and SSTL_2-compatible 2.5 V I/O signaling to support high-throughput parallel memory interfaces.

Designed for commercial systems requiring compact surface-mount memory, the device is offered in a 66-pin TSOPII package, JEDEC-qualified, RoHS-compliant, and specified for an ambient operating range of 0 °C to 70 °C.

Key Features

• DDR architecture – Double-data-rate operation delivers two data transfers per clock cycle for increased effective bandwidth.
• Memory organization – 2M × 16 organization providing 134.2 Mbit density with four-bank operation for efficient internal interleaving.
• Timing and performance – Maximum clock frequency 225 MHz, access time 12.5 ns, and write cycle time (word/page) 15 ns.
• Flexible burst and latency options – Supports burst lengths of 2, 4, and 8, burst types sequential and interleave, and CAS latencies 2, 2.5, and 3.
• Advanced I/O and clocking – Bi-directional data strobes (LDQS/UDQS), differential clock inputs (CLK/CLK¯), and on-die DLL to align DQ/DQS with CLK transitions.
• Read/Write data alignment – DQS is edge-aligned with data for reads and center-aligned for writes; data I/O transitions on both edges of DQS.
• Write masking – Data mask inputs (LDM/UDM) provide byte-write masking for write operations.
• Power and refresh – VDD/VDDQ = 2.5 V ±0.2 V with 15.6 µs refresh interval and support for auto and self refresh.
• Package and mounting – 66-pin TSOPII surface-mount package (0.65 mm pitch) suitable for compact board layouts.
• Commercial qualification and compliance – JEDEC-qualified device, RoHS-compliant, specified for 0 °C to 70 °C operating temperature.

Typical Applications

• Commercial embedded systems — Memory for commercial-grade embedded designs requiring DDR SDRAM in a compact 66-TSOPII footprint.
• SSTL_2-compatible memory interfaces — DDR memory for systems specifying 2.5 V SSTL_2 I/O signaling and differential clocking.
• Board-level memory expansion — Surface-mount 66-TSOPII packaging enables board designs with constrained space and standard SMT assembly.
• JEDEC-compliant DDR implementations — Use in designs that rely on JEDEC-qualified DDR SDRAM behavior and timing options.

Unique Advantages

• Predictable DDR performance: 225 MHz maximum clock and defined access/write timings support deterministic memory behavior in system designs.
• Flexible timing modes: Multiple CAS latencies and burst length options allow tuning for latency vs. throughput trade-offs.
• Dual-edge data transfer: DQS-driven, bi-directional data strobes and DLL alignment improve data timing margins for both reads and writes.
• Industry-standard I/O: 2.5 V I/O (SSTL_2 compatible) and differential clock inputs support common DDR interface schemes.
• Compact, surface-mount package: 66-TSOPII enables high-density board layouts while maintaining a standard SMT form factor.
• Regulatory and quality alignment: JEDEC qualification and RoHS compliance provide clear manufacturing and environmental alignment for commercial applications.

Why Choose M13S128168A-4.5TG2S?

The M13S128168A-4.5TG2S provides a measured balance of density, timing flexibility, and interface compatibility for commercial DDR memory requirements. Its 2M × 16 organization, four-bank DDR architecture, and SSTL_2-compatible 2.5 V I/O deliver the core DDR features needed for parallel memory designs in a compact 66-TSOPII surface-mount package.

This device is well suited for engineers and procurement teams specifying JEDEC-qualified, RoHS-compliant DDR SDRAM for commercial-temperature system designs that require defined timing options and deterministic DDR behavior backed by manufacturer documentation.

Request a quote or submit an inquiry to obtain pricing, availability, and volume options for M13S128168A-4.5TG2S.