M13S128168A-4.5BG2S

The M13S128168A-4.5BG2S is a commercial-grade DDR SDRAM device organized as 2M × 16 with a nominal density identified in the product name. It implements a double-data-rate architecture to deliver high-throughput parallel memory access at a 225 MHz clock rate (DDR450 timing).

Designed for surface-mount applications, this 60-ball BGA device supports standard DDR interfaces and JEDEC qualification, offering configurable burst and latency options for mainstream commercial embedded systems that require predictable DDR performance within a 0 °C to 70 °C operating range.

Key Features

• DDR double-data-rate architecture Two data transfers per clock cycle increase throughput versus single-data-rate memories.
• Memory organization Organized as 2M × 16 with four internal banks, providing the stated memory geometry for parallel data operations.
• Clocking and DLL Differential clock inputs (CLK/CLK̄) and an internal DLL align DQ and DQS transitions with the system clock for timing consistency.
• Bi-directional data strobe (DQS) DQS supports edge-aligned reads and center-aligned writes with data I/O transitions on both edges of the strobe.
• Flexible timing Supports CAS latencies of 2, 2.5 and 3, and burst lengths of 2, 4 and 8 to match system timing and throughput requirements.
• Write masking and data mask (DM) LDM/UDM inputs provide write masking for the lower and upper data bytes (DQ0–DQ7 and DQ8–DQ15).
• Refresh and self-refresh 15.6 µs refresh interval with auto and self-refresh modes to maintain data integrity.
• Power and I/O levels VDD / VDDQ = 2.5 V ±0.2 V (documented) and supplier voltage range 2.3 V – 2.7 V; I/O supports SSTL_2-compatible signaling.
• Package and mounting Surface-mount 60-ball BGA packaging for compact board-level integration.
• Commercial grade & compliance JEDEC qualification and RoHS compliance are specified for the device.

Unique Advantages

• Parallel DDR performance at 225 MHz: Enables doubled data throughput relative to single-edge DDR operation at the specified clock frequency.
• Configurable latency and burst modes: CAS latency options and selectable burst lengths allow tuning for system memory access patterns.
• SSTL_2‑compatible I/O levels: Standard 2.5 V I/O signaling eases integration with common DDR memory controllers designed for SSTL_2.
• Compact BGA footprint: 60-ball BGA packaging provides a small board area while supporting high-density DRAM integration.
• Operational robustness: JEDEC qualification, defined operating temperature (0 °C to 70 °C), and RoHS compliance support commercial application requirements.
• On-die timing features: DLL, DQS alignment, and four-bank architecture reduce system timing complexity and support sustained data transfers.

Why Choose M13S128168A-4.5BG2S?

The M13S128168A-4.5BG2S provides a straightforward DDR SDRAM solution for commercial designs that require a 2M × 16 memory organization with DDR450-class timing. Its combination of differential clocking, internal DLL, DQS strobe behavior and selectable CAS/burst settings delivers the timing flexibility engineers need to match system throughput and latency targets.

With a compact 60-BGA package, SSTL_2-compatible I/O and JEDEC qualification, this device is suitable for commercial embedded platforms where predictable DDR performance, board-level density and regulatory compliance (RoHS) are priorities.

If you would like pricing, availability, or technical lead information, request a quote or submit an inquiry to receive further details and support for incorporating the M13S128168A-4.5BG2S into your design.