M12L64322A-7TG2S

The M12L64322A-7TG2S is a synchronous high-data-rate DRAM organized as 4 × 524,288 words by 32 bits (67,108,864 bits). It implements a four-bank SDRAM architecture with a parallel interface and JEDEC-standard 3.3 V supply, providing predictable, clocked memory transactions sampled on the positive edge of the system clock.

Designed for high-bandwidth, high-performance memory system applications, this commercial-grade 86-TSOP II surface-mount device supports programmable burst lengths and CAS latencies to match varied system timing and throughput requirements.

Key Features

• Memory Core  67,108,864-bit organization as 4 × 524,288 × 32, supporting wide data words and multi-bank operation for parallelized memory access.
• Synchronous Performance  System clock sampling on the positive edge enables precise cycle control; rated up to 143 MHz with CAS latency options of 2 and 3.
• Flexible Burst and Addressing  Programmable burst lengths (1, 2, 4, 8, and full page) and burst types (sequential and interleave) with multiplexed row/column addressing and MRS programmability.
• Timing and Throughput  Access time of 6 ns and a word/page write cycle time of 14 ns, with burst read single-bit write capability and DQM data masking support.
• Power and Refresh  JEDEC-standard 3.3 V operation (3.0 V to 3.6 V supply range) with auto and self-refresh support and a 64 ms refresh period (4K cycle).
• Interface and Compatibility  LVTTL-compatible inputs (with multiplexed address) and parallel memory interface for integration into standard SDRAM memory subsystems.
• Package & Mounting  86-TSOP II (surface mount) package suitable for compact board layouts; RoHS-compliant, lead-free assembly.
• Operating Conditions  Commercial-grade operating temperature range 0 °C to 70 °C and JEDEC qualification.

Typical Applications

• High-bandwidth memory subsystems  Used where synchronous, clocked DRAM with programmable bursts and multi-bank support is required to meet throughput demands.
• High-performance embedded systems  Suited to designs that benefit from precise cycle control and selectable CAS latency settings to tune system timing.
• General-purpose SDRAM modules  Applicable in memory modules and boards requiring JEDEC-standard 3.3 V SDRAM devices in TSOP II packaging.

Unique Advantages

• Four-bank architecture: Enables concurrent bank operations to improve effective memory throughput in multi-access scenarios.
• Programmable latency and burst control: CAS latency (2 & 3) and multiple burst lengths provide timing flexibility for different system designs.
• Synchronous positive-edge sampling: All inputs sampled on the clock’s rising edge for deterministic timing and simplified timing analysis.
• JEDEC 3.3 V standard and LVTTL compatibility: Ensures predictable interfacing and compliance with common memory controller implementations.
• Surface-mount 86-TSOP II package: Compact, board-level mounting for space-constrained designs while maintaining full SDRAM functionality.
• RoHS compliant and commercial grade: Lead-free manufacturing with defined operating range 0 °C to 70 °C for mainstream applications.

Why Choose M12L64322A-7TG2S?

The M12L64322A-7TG2S positions itself as a versatile synchronous DRAM building block for high-bandwidth, high-performance memory systems that require programmable bursts, selectable CAS latencies, and four-bank operation. Its JEDEC-standard 3.3 V operation, LVTTL-compatible inputs, and deterministic clocked I/O make it suitable for designs that need reliable timing and configurable throughput.

With an 86-TSOP II surface-mount package, RoHS compliance, and commercial-grade temperature specifications, this device offers a compact, standards-based memory solution for embedded and module-level applications where predictable SDRAM behavior and integration with existing memory controllers are key considerations.

Request a quote or submit a purchase inquiry for the M12L64322A-7TG2S to discuss availability, pricing, and lead time for your design requirements.