M12L64322A-6BG2S

The M12L64322A-6BG2S from ESMT is a 67.11 Mbit synchronous DRAM organized as 4 × 524,288 words by 32 bits, provided in a 90‑BGA package. It implements a synchronous high data‑rate DRAM architecture with a parallel memory interface and JEDEC qualification for standard SDRAM operation.

This device targets systems requiring synchronous burst read/write operation with programmable latencies and burst lengths, supporting use in commercial temperature range designs that operate on a 3.0–3.6 V supply and at clock rates up to 166 MHz.

Key Features

• Memory Organization — 67.11 Mbit capacity organized as 512K × 32 with four internal banks for concurrent bank operation.
• Synchronous DRAM Core — JEDEC‑standard synchronous design; all inputs sampled on the positive edge of the system clock for precise cycle control.
• Clock and Timing — Supports operation up to 166 MHz with an access time of 5.4 ns and a write cycle (word/page) time of 12 ns; programmable CAS latency options of 2 and 3.
• Burst Modes — Programmable burst length (1, 2, 4, 8 and full page) and burst type (Sequential & Interleave) for flexible transfer patterns.
• Refresh and Power — Auto and self‑refresh supported with a 64 ms refresh period (4K cycle); operates from a 3.0 V to 3.6 V supply (JEDEC standard 3.3 V).
• Interface and Control — Parallel memory interface with LVTTL compatibility for multiplexed address inputs; DQM lines for data masking and burst read/single‑bit write support.
• Package and Mounting — Surface‑mount 90‑BGA package (BGA dimensions and 0.8 mm ball pitch per datasheet ball configuration).
• Commercial Grade — Rated for 0 °C to 70 °C operating temperature and RoHS‑compliant.

Typical Applications

• Embedded Systems — Used as synchronous main or buffer memory where predictable clocked transactions and burst transfers are required.
• Consumer Electronics — Suitable for commercial temperature applications that require low‑latency parallel memory access and burst data handling.
• Networking and Communications — Employed where parallel SDRAM with programmable latencies and multi‑bank operation can support bursty data flows.

Unique Advantages

• Programmable Performance Options — CAS latency and burst length programmability allow designers to tune memory timing to system requirements.
• Multi‑Bank Concurrency — Four internal banks enable improved command scheduling and sustained data throughput within the constraints of the SDRAM architecture.
• Standardized Interface — JEDEC compliance and LVTTL compatibility simplify integration with existing SDRAM controller designs.
• Power and Refresh Control — Auto/self‑refresh support and CKE clock enable control provide standard power management and refresh behavior for system reliability.
• Compact Surface‑Mount Packaging — 90‑BGA form factor supports space‑constrained board designs while providing the necessary ball‑out for high‑density routing.

Why Choose M12L64322A-6BG2S?

The M12L64322A-6BG2S combines a JEDEC‑standard synchronous DRAM architecture with flexible timing and burst options suited for designs that require deterministic, clock‑driven memory access. Its 67.11 Mbit capacity in a 512K × 32 organization across four banks makes it appropriate for systems needing parallel burst transfers and configurable latency.

With a 3.0–3.6 V supply range, support for LVTTL multiplexed addressing, and RoHS compliance, this commercial‑grade SDRAM is positioned for engineers designing compact, clocked memory subsystems that rely on established SDRAM behaviors and standard package formats.

Request a quote or submit a purchase inquiry to receive pricing and availability for the M12L64322A-6BG2S from ESMT.