M12L64164A-7TG2C

The M12L64164A-7TG2C from ESMT is a synchronous DRAM device providing 67,108,864 bits of storage organized as 4 × 1,048,576 words by 16 bits. It implements a synchronous high‑data‑rate architecture with multiplexed addresses and inputs sampled on the positive edge of the system clock, making it suitable for high‑bandwidth, high‑performance memory system applications.

Designed for JEDEC standard 3.3 V systems, this commercial‑grade, surface‑mount device is offered in a 54‑lead TSOP II package and supports a maximum device frequency of 143 MHz with programmable burst and latency options for flexible system integration.

Key Features

• Memory Architecture 67,108,864‑bit organization as 4 × 1,048,576 × 16, providing a 1M × 16 array with four independent banks for improved internal concurrency.
• Synchronous DRAM Core All inputs are sampled on the positive edge of the system clock; synchronous design enables I/O transactions on every clock cycle.
• JEDEC 3.3 V Supply JEDEC standard 3.3 V power supply compatibility with an operating voltage range of 3.0 V to 3.6 V for standard system integration.
• Performance and Timing Rated for up to 143 MHz operation with access time of 6 ns and write cycle time (word/page) of 14 ns; supports CAS latency options of 2 and 3.
• Burst and Addressing Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) with multiplexed row/column addressing (A0–A11).
• Refresh and Reliability Auto and self‑refresh support with a 64 ms refresh period (4K cycles) and 15.6 µs refresh interval for data retention maintenance.
• I/O and Masking 16‑bit parallel DQ0–DQ15 data interface with L(U)DQM data input/output masking; separate VDDQ/VSSQ for output buffer power and improved noise immunity.
• Package and Grade Surface‑mount 54‑TSOP II package (Pb‑free option listed in ordering information) and commercial operating temperature range 0 °C to 70 °C.

Typical Applications

• High‑bandwidth memory subsystems — Suited for designs requiring synchronous DRAM with programmable burst lengths and CAS latency for optimized throughput.
• Memory expansion on board‑level designs — 1M×16 organization and 54‑TSOP II surface‑mount package for compact board integration.
• Commercial electronic systems — Commercial temperature grade and JEDEC 3.3 V compatibility for general commercial products requiring synchronous DRAM.

Unique Advantages

• Flexible timing and burst modes: CAS latency 2 or 3 plus multiple burst lengths and types allow tuning for diverse memory access patterns.
• Four‑bank architecture: Internal four‑bank operation enables greater command concurrency within the device for better effective throughput.
• Isolated I/O power rails: Separate VDDQ/VSSQ for the output buffers provides improved noise immunity for cleaner I/O signaling.
• Synchronous, clocked operation: All inputs sampled on the positive clock edge supports deterministic timing and cycle‑accurate I/O.
• JEDEC 3.3 V compatibility: Standard 3.3 V supply range (3.0–3.6 V) eases integration into common system power rails.
• Board‑ready package: 54‑lead TSOP II surface‑mount package with Pb‑free option listed for lead‑free manufacturing processes.

Why Choose M12L64164A-7TG2C?

The M12L64164A-7TG2C delivers a compact, synchronous DRAM solution for designs that require a 64 Mbit memory organized as 1M×16 with four banks and JEDEC 3.3 V compatibility. Its programmable burst modes, selectable CAS latency, and synchronous clocked I/O make it a practical choice for high‑bandwidth memory subsystems and board‑level memory expansion in commercial electronic products.

With commercial temperature operation, isolated output power rails, and a surface‑mount 54‑TSOP II package, this device balances performance, integration flexibility, and manufacturability for engineers specifying synchronous DRAM at 143 MHz maximum device frequency.

Request a quote or submit an inquiry to obtain pricing, availability, and lead‑time information for M12L64164A-7TG2C.