M12L64164A-7BG2C

The M12L64164A-7BG2C is a synchronous high-data-rate DRAM organized as 4 × 1,048,576 words by 16 bits (67,108,864 bits / 67.11 Mbit). It implements a four-bank architecture with synchronous clocked I/O to enable predictable cycle timing and high-throughput parallel memory access.

Designed for high-bandwidth, high-performance memory system applications, this JEDEC-compliant SDRAM provides programmable burst lengths and CAS latencies to fit a range of commercial designs operating from a 3.0 V to 3.6 V supply.

Key Features

• Memory Organization  The device is organized as 1M × 16 with four internal banks, providing 67,108,864 bits of storage for parallel system memory architectures.
• Performance  Rated for 143 MHz operation with an access time of 6 ns and a write cycle time (word/page) of 14 ns to support synchronous high-data-rate transfers.
• Programmable Operation  Supports CAS Latency 2 and 3, programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) for flexible timing and throughput tuning.
• Synchronous Interface  All inputs are sampled on the positive edge of the system clock; LVTTL-compatible inputs with multiplexed address lines (RA/CA) allow standard synchronous control.
• Data Masking & Refresh  DQM input provides data masking for I/O operations. Auto and self refresh modes are supported with a 64 ms refresh period and a 15.6 µs refresh interval.
• Power  JEDEC-standard 3.3 V supply operation (3.0 V to 3.6 V specified supply range) with separate VDDQ/VSSQ for output buffer power and improved noise isolation.
• Package & Mounting  Surface-mount 54-VBGA package (0.8 mm ball pitch, compact 8 mm × 8 mm body) for space-efficient PCB integration.
• Commercial Grade & Compliance  Commercial-grade device with JEDEC qualification and RoHS compliance; specified operating temperature 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory subsystems  Used where synchronous parallel DRAM with programmable burst and latency is required to match system timing and throughput needs.
• Commercial embedded systems  Provides parallel SDRAM storage for commercial designs that operate within a 0 °C to 70 °C range and require JEDEC-compliant 3.3 V memory.
• Memory buffering in data-path designs  Four-bank organization and DQM masking enable efficient buffering and masked I/O for burst-oriented data transfers.

Unique Advantages

• Flexible timing configuration  CAS latencies (2 & 3) and multiple burst length options let designers tune latency and throughput to specific system requirements.
• Four-bank interleaving  Four-bank architecture supports concurrent bank operations and efficient burst sequencing for higher sustained data rates.
• Predictable synchronous operation  Inputs sampled on the positive clock edge and LVTTL compatibility provide deterministic behavior for clocked memory systems.
• Compact VBGA footprint  54-VBGA surface-mount package reduces PCB area while maintaining parallel I/O density for board-level integration.
• JEDEC compliance and RoHS  Meets JEDEC SDRAM standards and RoHS environmental compliance for streamlined qualification in commercial products.

Why Choose M12L64164A-7BG2C?

The M12L64164A-7BG2C positions itself as a JEDEC-standard synchronous DRAM option for commercial high-performance memory designs that require predictable timing, flexible burst modes and a compact BGA package. With a 1M × 16 organization, four-bank operation and support for CAS latency 2 and 3, it gives designers practical controls to balance latency and bandwidth in parallel-memory architectures.

Engineered for 3.3 V systems and rated for operation from 0 °C to 70 °C, this SDRAM is suited to a range of commercial embedded and memory-subsystem applications where JEDEC compliance, compact footprint and configurable timing are key selection criteria.

Request a quote or submit an inquiry to our sales team for pricing, availability, or technical clarification on integrating the M12L64164A-7BG2C into your design.