M12L64164A-5T(2C)

The M12L64164A-5T(2C) is a synchronous DRAM device organized as 4M × 16, providing 67.11 Mbit of volatile memory in a parallel SDRAM architecture with four internal banks. Its synchronous design and programmable burst/latency options support high-bandwidth, predictable memory access for demanding embedded and industrial systems.

Designed for industrial operation from -40 °C to 85 °C and JEDEC-qualified, this SDRAM delivers up to 200 MHz clock operation with a 5 ns access time and comes in compact surface-mount packages (54‑pin TSOP II and 54‑ball VBGA), enabling reliable board-level integration in temperature-challenging environments.

Key Features

• Memory Organization — 4M × 16 bit architecture delivering 67.11 Mbit of volatile SDRAM capacity across four internal banks for parallel, high-throughput access.
• Performance — Supports up to 200 MHz clock frequency with a 5 ns access time and 10 ns write cycle time (word/page), enabling fast read/write cycles in synchronous systems.
• Programmable Timing and Burst — CAS latency selectable (2 and 3) and programmable burst lengths (1, 2, 4, 8 and full page) with sequential and interleave burst types for flexible throughput tuning.
• Synchronous Interface — All inputs are sampled on the positive edge of the system clock; LVTTL-compatible address multiplexing and DQM data masking are supported for controlled I/O timing.
• Refresh and Power Management — Auto and self-refresh capability with a 64 ms refresh period (4K cycles) and a 15.6 µs refresh interval to maintain data integrity.
• Industrial-Grade Packaging — Available in 54 TSOP II and 54 VBGA surface-mount packages for compact board-level designs and improved assembly reliability.
• Compliance — JEDEC-qualified device and RoHS compliant for regulated manufacturing and supply-chain compliance.

Typical Applications

• Industrial Embedded Systems — Extended −40 °C to 85 °C temperature range and JEDEC qualification make this SDRAM suitable for controllers and embedded platforms operating in industrial environments.
• High-Bandwidth Memory Subsystems — Programmable burst lengths, CAS latency options and 200 MHz clock support enable integration into high-performance memory subsystems requiring predictable synchronous access.
• Compact Board-Level Designs — 54‑pin TSOP II and 54‑ball VBGA package choices allow designers to optimize for density and layout constraints on space-constrained PCBs.

Unique Advantages

• Flexible Performance Tuning — Selectable CAS latencies and multiple burst modes let designers balance latency and throughput for specific system requirements.
• Industrial Temperature Range — Rated to operate from −40 °C to 85 °C for deployment in temperature-challenging applications.
• High-Frequency Operation — Up to 200 MHz clock operation and a 5 ns access time support high-speed synchronous transactions.
• JEDEC Qualification — Conforms to JEDEC standards, providing predictable behavior and easier system validation against industry norms.
• Compact, Assembly-Friendly Packages — Available in 54 TSOP II and 54 VBGA surface-mount formats to suit different manufacturing and layout preferences.
• Data Integrity Features — DQM masking, auto/self-refresh, and defined refresh intervals help maintain data integrity in continuous-operation systems.

Why Choose M12L64164A-5T(2C)?

The M12L64164A-5T(2C) combines synchronous SDRAM architecture, selectable timing, and industrial temperature capability to deliver a predictable, high-bandwidth memory option for embedded and industrial designs. Its JEDEC qualification and on-chip refresh features simplify system-level timing and reliability considerations.

This device is well suited for designers who need a compact, surface-mount SDRAM with flexible latency/burst configuration and robust operating temperature support. The combination of 200 MHz operation, 4-bank organization and standard packaging options supports scalable, long-term deployment in industrial and high-performance memory subsystems.

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