M12L5121632A-7T(2T)
| Part Description |
SDRAM 3.3V |
|---|---|
| Quantity | 524 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 54 pin TSOPII/ 54 Ball FBGA | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5 ns | Grade | Commercial | ||
| Clock Frequency | 143 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 14 ns | Packaging | 54 pin TSOPII/ 54 Ball FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.28 |
Overview of M12L5121632A-7T(2T) – SDRAM 3.3V
The M12L5121632A-7T(2T) from ESMT is a synchronous DRAM device organized as 4 × 8,388,608 words by 16 bits for a total density of 536.9 Mbit. It implements a synchronous SDRAM architecture with programmable burst lengths and latencies to support high-bandwidth, high-performance memory system applications.
Designed for surface-mount assembly, the device is offered in TSOP II and BGA54 packages and carries JEDEC qualification with RoHS-compliant, Pb‑free construction. Typical system uses include high-throughput memory subsystems where predictable, clocked DRAM timing and flexible access modes are required.
Key Features
- Memory Core & Organization 536.9 Mbit capacity organized as 32M × 16 (4 banks of 8,388,608 words × 16 bits), delivering wide 16-bit parallel data paths for system memory designs.
- Synchronous SDRAM Architecture All inputs are sampled on the positive edge of the system clock; supports four-bank operation, burst read/single write operation and LVTTL-compatible multiplexed address inputs.
- Programmable Latency & Burst CAS latency options of 2 and 3, and selectable burst lengths (1, 2, 4, 8 and full page) with sequential or interleave burst types for flexible performance tuning.
- Timing & Performance Specified access time of 5 ns and a clock frequency rating of 143 MHz for the -7 variant; write cycle (word/page) time listed at 14 ns for system timing calculations.
- Refresh & Data Mask Auto and self-refresh support with a 64 ms refresh period (8K cycles) and DQM pins for byte masking during read/write operations.
- Power & Signaling Datasheet references a JEDEC standard 3.3V power supply; the device supports LVTTL-compatible signaling for multiplexed address operation. (Product specification also lists an internal VoltageSupply value of 2.5V.)
- Packages & Mounting Available in 54‑pin TSOP II and 54‑ball BGA (BGA54) packages; surface-mount mounting type suitable for compact PCB implementations.
- Operating Range & Compliance Commercial grade device with an operating temperature range of 0 °C to 70 °C and JEDEC qualification; RoHS‑compliant, Pb‑free construction.
Typical Applications
- High-bandwidth memory subsystems — Used where synchronous, burst-capable DRAM is required for predictable, clocked data transfer and high throughput.
- Embedded systems and consumer equipment — Commercial-grade SDRAM option for systems operating within 0 °C to 70 °C that need flexible latency and burst control.
- Board-level memory expansion — 16-bit parallel interface and common TSOP II/BGA54 packages make it suitable for designers adding expandable volatile memory on PCBs.
Unique Advantages
- Flexible latency and burst control: CAS latency options (2 & 3) and multiple burst-length modes let designers optimize throughput versus latency.
- Predictable synchronous operation: Inputs sampled on the positive clock edge enable precise cycle control for deterministic system timing.
- JEDEC-standard footprint options: Offered in industry-standard TSOP II and BGA54 packages for established manufacturing workflows and footprint reuse.
- Refresh and masking features: Auto/self-refresh and DQM masking simplify data protection and low-power refresh handling in system designs.
- Compliance and assembly readiness: JEDEC-qualified, RoHS-compliant and surface-mount packaged for modern production and regulatory requirements.
Why Choose M12L5121632A-7T(2T)?
The M12L5121632A-7T(2T) is positioned for designers who need a JEDEC‑qualified synchronous DRAM device with flexible latency and burst options, predictable clocked operation, and mainstream package choices (TSOP II or BGA54). Its 536.9 Mbit density and 16-bit parallel organization make it suitable for high-bandwidth memory subsystems and board-level expansions where deterministic timing and refresh control are required.
With RoHS-compliant construction and commercial-grade operating range, this ESMT SDRAM balances performance and manufacturability for embedded and consumer applications that rely on reliable, programmable SDRAM behavior.
If you would like pricing, availability, or to request a quote for M12L5121632A-7T(2T), submit a quote request or contact sales to discuss order quantities and delivery.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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