M12L64164A-5B(2C)

The M12L64164A-5B(2C) from ESMT is a synchronous DRAM device providing 67,108,864 bits (4M × 16 × 4 banks) of volatile memory organized for parallel system interfaces. It implements JEDEC-standard synchronous SDRAM functionality with programmable burst lengths and CAS latencies to support a range of clocked memory system designs.

Targeted at industrial applications, this device supports operation from -40°C to 85°C and provides timing and interface flexibility—including burst modes, multiple CAS latencies and DQM masking—suitable for memory subsystems that require deterministic, clock-synchronous data transfers up to the device’s maximum rated frequency.

Key Features

• Memory Core 67,108,864-bit SDRAM organized as 4 × 1,048,576 words by 16 bits, providing a parallel 16-bit data path for system integration.
• Clocked Operation & Performance Rated for operation up to 200 MHz with CAS latency options of 2 and 3 and a 5 ns access-time class, enabling predictable synchronous transfers.
• Burst and Bank Control Programmable burst lengths (1, 2, 4, 8 and full-page) and four-bank operation allow flexible block read/write patterns and efficient bus utilization.
• Refresh and Reliability Supports auto and self-refresh with a 64 ms refresh period (4K cycles) and a 15.6 µs refresh interval to maintain data integrity in typical SDRAM refresh schemes.
• Interface & Control Signals Standard SDRAM control signals (CLK, CS, CKE, RAS, CAS, WE, BA0/1, A0–A11, DQ0–DQ15, L(U)DQM) with inputs sampled on the positive clock edge and DQM for data masking.
• Power & Standards JEDEC-standard power and signaling compatibility; device is JEDEC-qualified and RoHS compliant.
• Industrial Temperature & Mounting Industrial-grade operation from -40 °C to 85 °C; available in surface-mount packages (54 TSOP II and 54 VBGA).

Typical Applications

• Industrial Control — Memory buffering and program/data storage in industrial embedded controllers operating across extended temperature ranges.
• Networking & Telecom Equipment — Packet buffering and temporary data storage in synchronous memory subsystems that leverage burst access and multi-bank operation.
• Consumer/Professional Imaging Systems — Frame buffering and high-throughput data capture where synchronous burst transfers and CAS latency options help match system timing.

Unique Advantages

• Deterministic Synchronous Interface: Positive-edge sampling on CLK with programmable latencies and burst modes enables consistent, clock-aligned transfers.
• Flexible Burst Handling: Multiple burst lengths and burst types (sequential and interleave) make it easier to optimize throughput for specific access patterns.
• Industrial Temperature Rating: Specified operation from -40 °C to 85 °C supports deployment in temperature-challenging environments.
• JEDEC Qualification & RoHS Compliance: Industry-standard qualification and compliance simplify integration into regulated product lines.
• Package Options for Assembly: Available in 54 TSOP II and 54 VBGA surface-mount packages to match assembly and layout preferences.

Why Choose M12L64164A-5B(2C)?

The M12L64164A-5B(2C) is positioned for designers who need a synchronous, JEDEC-standard SDRAM device with industrial temperature capability and flexible timing options. Its 4-bank architecture, programmable burst lengths, and CAS latency settings provide designers with the timing control required for a range of clocked memory subsystems.

This device is well suited to embedded and industrial designs that require predictable synchronous transfers, support for refresh cycles, and surface-mount package choices, delivering a straightforward memory building block with JEDEC qualification and RoHS compliance for long-term deployment.

Request a quote or submit an inquiry to learn about availability, packaging options, and ordering for the M12L64164A-5B(2C).