M12L64164A-5BG2C

The M12L64164A-5BG2C from ESMT is a synchronous DRAM device organized as 4 × 1,048,576 words by 16 bits for a total of 67,108,864 bits. It is a JEDEC-compatible, commercial-grade SDRAM designed for high-data-rate, clock-synchronous memory subsystems.

With support for up to 200 MHz operation, multiplexed address interface, programmable burst lengths and CAS latencies, the M12L64164A-5BG2C targets high-bandwidth, high-performance memory system applications requiring parallel SDRAM integration in a compact 54-ball VBGA package.

Key Features

• Memory Architecture — 67,108,864 bits organized as 4 × 1,048,576 × 16-bit banks, enabling banked operation and parallel data access.
• Synchronous DRAM — All inputs are sampled on the positive edge of the system clock for precise cycle control and synchronous I/O on every clock.
• Performance — Specified for 200 MHz operation with an access time of 4.5 ns and a 10 ns write-cycle time for word/page operations.
• Burst and Latency Options — Programmable burst lengths (1, 2, 4, 8, full page) and CAS latencies of 2 and 3 support flexible throughput tuning.
• Banked Operation — Four-bank operation with BA0/BA1 bank selects for improved command concurrency and throughput.
• Refresh and Power Management — Auto and self-refresh supported, 64 ms refresh period (4K cycle) and 15.6 µs refresh interval to maintain data integrity.
• Interface and Control — LVTTL compatible signals with multiplexed row/column addressing (A0–A11), standard SDRAM control pins (CLK, CS, CKE, RAS, CAS, WE) and DQM data-mask functionality.
• Supply and Packaging — JEDEC standard 3.3 V supply range (3.0 V–3.6 V) and a compact 54-VBGA surface-mount package; RoHS compliant and Pb‑free option listed in ordering information.
• Operating Range and Qualification — Commercial grade with JEDEC qualification and an operating temperature range of 0 °C to 70 °C.

Typical Applications

• High-bandwidth memory subsystems — Use the M12L64164A-5BG2C where synchronous, banked SDRAM is required to support sustained parallel data transfers at up to 200 MHz.
• Board-level buffering — Suitable for designs needing parallel data buffering and masking (DQM) with programmable burst and latency control.
• Embedded systems and commercial electronics — Commercial-grade operating range (0 °C to 70 °C) and JEDEC compatibility make the device suited for general-purpose embedded memory expansion.

Unique Advantages

• Banked 1Mx16 Organization — Four-bank structure (4 × 1,048,576 × 16) enables concurrent bank management and improved command throughput for multi-access scenarios.
• Flexible Performance Tuning — Programmable burst lengths and CAS latency options let designers balance latency and throughput to match system timing requirements.
• Synchronous, Clocked I/O — Positive-edge clock sampling provides deterministic timing for system-level memory scheduling and predictable data transfers at each clock cycle.
• Industry-Standard Interface — LVTTL-compatible signals, multiplexed address pins, and standard SDRAM control lines facilitate integration into existing parallel SDRAM memory systems.
• Compact Surface-Mount Package — 54-VBGA package offers a small footprint for space-constrained board designs while providing isolated power pins for I/O buffer noise immunity (VDDQ/VSSQ).
• Compliance and Environmental — JEDEC qualification and RoHS compliant / Pb-free options align with commercial manufacturing and environmental requirements.

Why Choose M12L64164A-5BG2C?

The M12L64164A-5BG2C delivers a synchronous, banked SDRAM solution with JEDEC-standard 3.3 V operation, flexible burst and latency programming, and a compact 54-VBGA footprint. Its 200 MHz rating, 4.5 ns access time, and four-bank architecture make it a practical choice for engineers implementing high-throughput parallel memory designs that require predictable, clock-synchronous behavior.

Designed for commercial applications, this part is suitable for system designers who need a verified JEDEC-compatible SDRAM device from ESMT with standard refresh, masking, and power supply characteristics. The combination of programmable modes, compact packaging, and RoHS compliance supports scalable integration into a variety of board-level memory subsystems.

Request a quote or contact sales for pricing, availability and ordering information for the M12L64164A-5BG2C. Our team can provide lead-time details and support for your design requirements.