M12L64322A (2S)
| Part Description |
Ind. -40~85°C, SDRAM, 3.3V |
|---|---|
| Quantity | 103 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 86 TSOPII/ 90 BGA | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 86 TSOPII/ 90 BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M12L64322A (2S) – Ind. -40~85°C, SDRAM, 3.3V
The M12L64322A (2S) is a synchronous DRAM (SDRAM) organized as 4 × 524,288 words by 32 bits for a total of 67,108,864 bits (67.11 Mbit). It implements a four-bank SDRAM architecture with programmable burst length and CAS latency options for predictable, clock-synchronous memory transactions.
Designed for industrial-grade operation with an operating temperature range of −40 °C to 85 °C and JEDEC-standard 3.3V power supply, the device supports up to 200 MHz operation and features timing options suited to embedded and industrial system designs requiring deterministic memory behavior.
Key Features
- Core & Memory Architecture 67,108,864-bit SDRAM organized as 2M × 32 (4 × 524,288 × 32), four-bank operation for efficient interleaved access patterns.
- Performance Supports up to 200 MHz clock frequency, 5 ns access time and selectable CAS latency (2 & 3); write cycle time (word/page) specified at 15 ns to enable high-rate read/write cycles.
- Burst and Transfer Flexibility Programmable burst lengths (1, 2, 4, 8 & full page) and burst type (sequential & interleave) for adaptable data transfer modes.
- Interface & Signaling Synchronous parallel SDRAM interface with LVTTL-compatible inputs and all inputs sampled on the positive edge of the system clock for deterministic timing.
- Power & Standards JEDEC-standard 3.3V power supply and JEDEC qualification ensure standardized electrical behavior and interoperability with JEDEC-compliant systems.
- Reliability & Refresh Auto and self-refresh capability with a 64 ms refresh period (4K cycle) and DQM masking for robust data integrity and low-maintenance operation.
- Package & Mounting Available in industrial surface-mount packages: 86-lead TSOPII and 90-ball BGA options to match board-level space and assembly requirements.
- Industrial Temperature Grade Specified for −40 °C to 85 °C operation to support industrial and other temperature-demanding environments.
Typical Applications
- Industrial Control Use in embedded controllers and automation systems that require wide temperature operation and predictable synchronous memory timing.
- Networking & Communications Suitable for buffering and packet memory where synchronous, banked access and programmable burst behavior improve throughput.
- Embedded Systems Fits general-purpose embedded platforms needing a JEDEC-standard SDRAM offering deterministic latencies and multiple burst modes.
- Instrumentation & Test Equipment Ideal for measurement and data-acquisition modules that require reliable SDRAM with auto/self-refresh and DQM masking.
Unique Advantages
- Industrial Temperature Capability Specified −40 °C to 85 °C for deployment in temperature-challenging environments.
- JEDEC-Standard Power and Qualification 3.3V JEDEC-standard supply and JEDEC qualification provide predictable electrical behavior and easier integration into standard memory subsystems.
- Flexible Timing Modes Selectable CAS latency (2 & 3), multiple burst lengths and burst types let designers tune bandwidth and latency to application needs.
- Deterministic, Synchronous Operation All inputs sampled on the positive edge of the system clock and four-bank operation enable repeatable cycle timing and interleaved access.
- Packaging Options for Board-Level Choices Choice of 86 TSOPII or 90 BGA surface-mount packages supports diverse mechanical and assembly requirements.
Why Choose M12L64322A (2S)?
The M12L64322A (2S) positions itself as a JEDEC-compliant SDRAM option that combines four-bank, synchronous architecture with industrial temperature rating and multiple package choices. Its mix of selectable latencies, burst modes and refresh capabilities makes it practical for embedded and industrial designs that demand predictable memory timing and robust operation.
Engineers specifying memory for industrial control, communications, and embedded systems can rely on the M12L64322A (2S) for standardized electrical behavior, wide temperature tolerance and flexible performance tuning without sacrificing board-level mounting options.
Request a quote or submit an inquiry to receive pricing and availability information for the M12L64322A (2S).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
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