M13S128168A-5BG2S

The M13S128168A-5BG2S is a DDR SDRAM memory device organized as 2M × 16 with a density of 134.2 Mbit and a maximum clock frequency of 200 MHz. It implements a double-data-rate architecture with four internal banks, delivering synchronous, edge‑aligned data transfers for systems requiring standard DDR performance in a compact 60‑ball BGA package.

Designed for JEDEC-qualified commercial applications, the device operates from a 2.3 V to 2.7 V supply range (VDD/VDDQ nominal 2.5 V ±0.2 V), supports standard SSTL_2 I/O levels, and is RoHS compliant.

Key Features

• DDR Double‑Data‑Rate Architecture Two data transfers per clock cycle with bi‑directional data strobe (DQS) and differential clock inputs to support high‑efficiency data throughput.
• Memory Organization & Capacity 2M × 16 organization providing 134.2 Mbit density with four internal banks for concurrent bank operations.
• Performance & Timing Rated for 200 MHz operation with typical access and write cycle times of 15 ns; supports CAS latencies 2, 2.5 and 3 and burst lengths of 2, 4 and 8.
• Synchronous Interface Behavior All inputs (except data and DM) are sampled on the rising edge of CLK; DQS is edge‑aligned for READs and center‑aligned for WRITEs to simplify system timing.
• Refresh & Power Modes 15.6 µs refresh interval with Auto and Self Refresh support to maintain data integrity while minimizing management overhead.
• Voltage & I/O Compatibility VDD/VDDQ = 2.5 V ±0.2 V (device supply range 2.3 V–2.7 V) with 2.5 V I/O compatible with SSTL_2 signaling.
• Package & Mounting 60‑ball BGA surface‑mount package for compact board footprint and reliable solder connections.
• Commercial Grade Reliability JEDEC qualification and an operating ambient temperature range of 0 °C to 70 °C.
• Environmental Compliance RoHS compliant.

Unique Advantages

• DDR throughput with compact footprint: The double‑data‑rate architecture combined with a 60‑BGA package delivers standard DDR performance in space‑constrained PCBs.
• Flexible timing options: Multiple CAS latencies and selectable burst lengths let designers tune performance and latency to match system requirements.
• SSTL_2‑compatible I/O: 2.5 V I/O signaling simplifies integration with SSTL_2 systems and memory controllers designed to JEDEC DDR interfaces.
• Low‑voltage operation: 2.3 V–2.7 V supply range (nominal 2.5 V) supports lower power operation compared with higher‑voltage memories.
• JEDEC qualification and RoHS compliance: Provides standardized interface behavior and environmental compliance for commercial designs.
• Built‑in refresh management: Auto and Self Refresh with a 15.6 µs interval reduce firmware refresh overhead while preserving data integrity.

Why Choose M13S128168A-5BG2S?

The M13S128168A-5BG2S is positioned as a straightforward, JEDEC‑qualified DDR SDRAM option when you need a 134.2 Mbit, 2M×16 memory device with standard DDR timing options and SSTL_2 I/O. Its 200 MHz rating, flexible CAS and burst settings, and integrated refresh modes make it suitable for designs that require predictable DDR behavior in a compact BGA package.

Choose this part for commercial designs that prioritize compliance with DDR interface standards, compact board integration (60‑BGA surface mount), and a nominal 2.5 V power profile with RoHS environmental compliance.

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