M13S128324A-3.6BIG2M

The M13S128324A-3.6BIG2M is a DDR SDRAM memory device organized as 1M × 32 with a nominal 128Mbit product designation. It implements a double-data-rate architecture with quad-bank operation and is supplied in a 144-ball FBGA surface-mount package targeted for industrial applications.

Designed for systems that require high-speed parallel memory access, the device supports up to 275 MHz operation, JEDEC qualification, an industrial operating temperature range of −40 °C to 85 °C, and a 2.5–2.7 V supply for the speed -3.6 option.

Key Features

• Memory Organization 1M × 32 configuration providing a 128Mbit-class DDR SDRAM memory resource (product designation M13S128324A).
• DDR Double-Data-Rate Architecture Two data transfers per clock cycle with quad bank operation and burst lengths of 2, 4, and 8 for flexible data bursts.
• Data Handling and Timing Bi-directional data strobe (DQS), differential clock inputs (CLK and CLK̄), DLL alignment of DQ and DQS, and support for CAS latencies 2, 2.5, and 3.
• High-Speed Performance Rated for up to 275 MHz clock frequency (DDR550 class) with an access time of 10 ns and write cycle time (word page) of 15 ns.
• Power and I/O Supported VDD/VDDQ range for the -3.6 speed option is approximately 2.5 V to 2.7 V; I/O is 2.5 V SSTL_2 compatible.
• Refresh and Reliability Auto and self-refresh supported with a 32 ms refresh period (4K cycle); JEDEC-qualified device grade for industrial use.
• Industrial Temperature and Packaging Operation from −40 °C to 85 °C in a 144-ball FBGA (12 mm × 12 mm × 1.4 mm body, 0.8 mm ball pitch) surface-mount package.
• Write Mask and Data Alignment Data mask (DM) supported for write masking; DQS edge-aligned for reads and center-aligned for writes to support reliable timing.

Typical Applications

• Industrial Control Systems Provides fast parallel memory for control logic, buffering and working memory in harsh temperature environments.
• Embedded Industrial Computing Fits compact, surface-mount module designs that require DDR memory in constrained PCB footprints.
• Instrumentation and Test Equipment Useful for high-speed data capture and temporary storage where JEDEC qualification and industrial temperature range are required.

Unique Advantages

• High-Speed DDR Operation: Up to 275 MHz clock frequency supports demanding throughput needs within supported access and cycle times.
• Industrial Temperature Range: Rated for −40 °C to 85 °C, enabling deployment in industrial-grade environments.
• JEDEC Qualification: Conforms to JEDEC standards for DDR SDRAM, providing a consistent foundation for system-level design.
• Compact FBGA Package: 144-ball FBGA surface-mount package minimizes board area while maintaining full parallel interface connectivity.
• Flexible Timing and Burst Modes: Support for multiple CAS latencies and burst lengths simplifies timing trade-offs for different system designs.
• On-Die Features for Reliable Transfer: DLL alignment, DQS handling and write mask (DM) support improve data integrity at DDR speeds.

Why Choose M13S128324A-3.6BIG2M?

The M13S128324A-3.6BIG2M delivers a proven DDR SDRAM architecture designed for industrial applications that require reliable, high-speed parallel memory. Its combination of DDR features (DQS, differential clock, DLL), JEDEC qualification, and an extended operating temperature range make it well suited to embedded industrial systems and instrumentation that demand stable memory performance across environmental extremes.

With a compact 144-FBGA surface-mount package and support for 2.5–2.7 V operation at the -3.6 speed grade, this device offers a balance of performance and integration for designers targeting industrial-grade memory implementations.

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