M13S128324A-4BIG2M

The M13S128324A-4BIG2M is an industrial-grade DDR SDRAM device in a 144-ball FBGA surface-mount package. It provides a 1M × 32 memory organization delivering 128Mbit of volatile DRAM with a parallel memory interface and JEDEC qualification.

Built on a double-data-rate architecture with bi-directional DQS and differential clock inputs, the device targets applications that require 250 MHz operation, selectable CAS latencies, and reliable operation across an extended temperature range of -40°C to 85°C.

Key Features

• Memory Architecture: 1M × 32 organization with quad-bank operation, delivering 128Mbit DDR SDRAM capacity for parallel-memory designs.
• Double-Data-Rate Operation: Two data transfers per clock cycle with bi-directional data strobe (DQS) and a DLL to align DQ/DQS transitions to CLK.
• Performance & Timing: Rated for 250 MHz clock frequency with access time of 10 ns and write cycle time (word page) of 15 ns; CAS latency options include 2, 2.5 and 3 with burst lengths of 2, 4 and 8.
• Data I/O and Clocking: Differential clock inputs (CLK and CLK̅), DQS edge-aligned for READs and center-aligned for WRITEs, and write masking via DM signals.
• Power and I/O Levels: VDD and VDDQ supply range 2.375 V to 2.625 V; 2.5 V I/O compatible with SSTL_2 signaling as documented in the product datasheet.
• Refresh and Reliability: Auto and self-refresh functionality with a 32 ms refresh period (4K cycle) and JEDEC qualification for industrial use.
• Package and Mounting: 144-ball FBGA (12 mm × 12 mm × 1.4 mm body, 0.8 mm ball pitch) optimized for surface-mount assembly and compact board integration.
• Industrial Temperature Range: Guaranteed operation from -40°C to 85°C for demanding environments.

Typical Applications

• Industrial Control Systems: Use where extended temperature operation and JEDEC-qualified DDR memory are required for reliable system memory and buffering.
• Embedded Industrial Modules: Suitable for compact, surface-mount modules that need a 1M × 32 DDR memory interface at 250 MHz.
• Memory Buffering and Data Capture: Applicable in designs that leverage DDR data strobes (DQS) and burst transfers for mid-rate data buffering.

Unique Advantages

• Industrial Temperature Performance: Rated for -40°C to 85°C, enabling deployment in temperature-challenging environments without derating memory specifications.
• Flexible Timing Options: CAS latency choices (2, 2.5, 3) and multiple burst lengths allow tuning for system latency and throughput trade-offs.
• Robust DDR Features: Bi-directional DQS, DLL alignment, and differential clocks simplify high-speed timing and improve signal integrity for read/write operations.
• JEDEC Qualification: Conforms to JEDEC requirements as documented, supporting predictable integration into standardized designs.
• Compact, Surface-Mount Package: 144-FBGA package supports high-density PCB layouts while maintaining a stable mechanical footprint for industrial assemblies.

Why Choose M13S128324A-4BIG2M?

The M13S128324A-4BIG2M combines DDR double-data-rate architecture with industrial-grade robustness to deliver a mid-rate memory solution for embedded and industrial applications. With selectable CAS latencies, SSTL_2-compatible I/O levels, and comprehensive DDR features such as DQS and DLL alignment, the device supports deterministic timing and flexible performance tuning.

This part is suited to designers and procurement teams seeking a JEDEC-qualified, surface-mount DDR SDRAM in a 144-FBGA package that operates across -40°C to 85°C and runs at 250 MHz. Its combination of timing flexibility, refresh features, and compact packaging provides a reliable memory building block for long-term industrial deployments.

Request a quote or submit your RFQ for the M13S128324A-4BIG2M to get pricing and availability information tailored to your production needs.