M13S128324A-5BIG2M

128Mb DDR SDRAM Ind.
Part Description

DDR SDRAM 128Mbit 1Mx32 200MHz 144-FBGA Industrial

Quantity 1,522 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package144-FBGAMemory FormatDRAMTechnologyDRAM
Memory Size128 MbitAccess Time15 nsGradeIndustrial
Clock Frequency200 MHzVoltage2.375V ~ 2.625VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page15 nsPackaging144-FBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization1M x 32
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M13S128324A-5BIG2M – DDR SDRAM 128Mbit 1Mx32 200MHz 144-FBGA Industrial

The M13S128324A-5BIG2M is a DDR SDRAM device from ESMT in a 1M × 32 organization designed for industrial-grade board-level memory. It implements double-data-rate architecture with a parallel interface and is offered in a 144-ball FBGA surface-mount package for compact system integration.

Targeted at industrial applications, the device combines programmable DDR features and JEDEC qualification with an extended operating range of -40 °C to 85 °C and a supply window of 2.375 V to 2.625 V to support reliable operation in harsh environments.

Key Features

  • Memory Organization — 1M × 32 organization with a product designation of 128Mbit; specification lists MemorySize as 134.2 Mbit, providing a wide 32-bit data path for board-level designs.
  • DDR Architecture — Double-data-rate operation with two data transfers per clock cycle, differential clock inputs (CLK/CLK̅) and a DLL to align DQ/DQS transitions with CLK.
  • Data I/O and Timing — Bi-directional data strobe (DQS) with edge-aligned reads and center-aligned writes; CAS latency options 2, 2.5 and 3; burst lengths 2, 4 and 8 and burst types sequential or interleave.
  • Performance — Specified for 200 MHz system clock (ordering information lists this speed as DDR400 for this device) with typical access and write-cycle times of 15 ns.
  • Power and I/O — VDD and VDDQ supply range of 2.375 V to 2.625 V; supports 2.5 V I/O (SSTL_2 compatible as documented in the datasheet).
  • Refresh and Reliability — Auto and self refresh supported with a 32 ms refresh period (4K cycles); JEDEC qualification noted in the product specifications.
  • Package and Mounting — Surface-mount 144-FBGA package (12 mm × 12 mm × 1.4 mm body, 0.8 mm ball pitch) for compact, high-density assembly.
  • Industrial Temperature Range — Rated for operation from -40 °C to 85 °C suitable for industrial environments.
  • RoHS Compliance — Device is RoHS compliant.

Typical Applications

  • Industrial Control — Board-level DDR memory for embedded controllers and industrial automation equipment requiring extended temperature operation and JEDEC-standard behavior.
  • Embedded Systems — Compact FBGA package and 32-bit data organization for integration into embedded platforms where board space and interface standardization matter.
  • OEM Memory Modules — Suitable for use in custom memory modules or daughtercards where a parallel DDR SDRAM interface and industrial-grade temperature support are required.

Unique Advantages

  • Industrial Temperature Range: -40 °C to 85 °C rating enables deployment in harsher operating environments without derating specified by the device.
  • JEDEC Qualification: Conformance to JEDEC specifications supports predictable timing, interface behavior, and interoperability in standard DDR designs.
  • Flexible DDR Features: Support for CAS latencies 2/2.5/3, multiple burst lengths and both sequential and interleave burst types allows tuning for system performance and access patterns.
  • Robust I/O and Timing Alignment: DLL alignment, differential clock inputs and DQS support provide accurate timing for high-reliability data transfers.
  • Compact Surface-Mount Package: 144-FBGA footprint delivers high-density integration for space-constrained boards while maintaining a standard ball map for PCB layout.
  • Wide Supply Window: 2.375 V–2.625 V VDD/VDDQ range supports system-level power tolerance and stable operation across production variance.

Why Choose M13S128324A-5BIG2M?

The M13S128324A-5BIG2M positions itself as a practical, standards-based DDR SDRAM solution for industrial and embedded applications that require a 1M × 32 organization in a compact FBGA package. Its JEDEC-defined DDR features, supported timing options and DQS/DLL timing alignment simplify integration into existing DDR memory controllers.

Engineers specifying this device will benefit from its industrial temperature rating, RoHS compliance, and the voltage/I/O characteristics documented for reliable board-level deployment, making it a suitable choice for OEMs and system designers targeting robust, JEDEC-compatible DDR memory implementations.

Request a quote or submit an inquiry to obtain pricing, availability and lead-time information for the M13S128324A-5BIG2M.

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