M13S128324A-5BIG2M
| Part Description |
DDR SDRAM 128Mbit 1Mx32 200MHz 144-FBGA Industrial |
|---|---|
| Quantity | 1,522 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 144-FBGA | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 15 ns | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.375V ~ 2.625V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 144-FBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 32 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.02 |
Overview of M13S128324A-5BIG2M – DDR SDRAM 128Mbit 1Mx32 200MHz 144-FBGA Industrial
The M13S128324A-5BIG2M is a DDR SDRAM device from ESMT in a 1M × 32 organization designed for industrial-grade board-level memory. It implements double-data-rate architecture with a parallel interface and is offered in a 144-ball FBGA surface-mount package for compact system integration.
Targeted at industrial applications, the device combines programmable DDR features and JEDEC qualification with an extended operating range of -40 °C to 85 °C and a supply window of 2.375 V to 2.625 V to support reliable operation in harsh environments.
Key Features
- Memory Organization — 1M × 32 organization with a product designation of 128Mbit; specification lists MemorySize as 134.2 Mbit, providing a wide 32-bit data path for board-level designs.
- DDR Architecture — Double-data-rate operation with two data transfers per clock cycle, differential clock inputs (CLK/CLK̅) and a DLL to align DQ/DQS transitions with CLK.
- Data I/O and Timing — Bi-directional data strobe (DQS) with edge-aligned reads and center-aligned writes; CAS latency options 2, 2.5 and 3; burst lengths 2, 4 and 8 and burst types sequential or interleave.
- Performance — Specified for 200 MHz system clock (ordering information lists this speed as DDR400 for this device) with typical access and write-cycle times of 15 ns.
- Power and I/O — VDD and VDDQ supply range of 2.375 V to 2.625 V; supports 2.5 V I/O (SSTL_2 compatible as documented in the datasheet).
- Refresh and Reliability — Auto and self refresh supported with a 32 ms refresh period (4K cycles); JEDEC qualification noted in the product specifications.
- Package and Mounting — Surface-mount 144-FBGA package (12 mm × 12 mm × 1.4 mm body, 0.8 mm ball pitch) for compact, high-density assembly.
- Industrial Temperature Range — Rated for operation from -40 °C to 85 °C suitable for industrial environments.
- RoHS Compliance — Device is RoHS compliant.
Typical Applications
- Industrial Control — Board-level DDR memory for embedded controllers and industrial automation equipment requiring extended temperature operation and JEDEC-standard behavior.
- Embedded Systems — Compact FBGA package and 32-bit data organization for integration into embedded platforms where board space and interface standardization matter.
- OEM Memory Modules — Suitable for use in custom memory modules or daughtercards where a parallel DDR SDRAM interface and industrial-grade temperature support are required.
Unique Advantages
- Industrial Temperature Range: -40 °C to 85 °C rating enables deployment in harsher operating environments without derating specified by the device.
- JEDEC Qualification: Conformance to JEDEC specifications supports predictable timing, interface behavior, and interoperability in standard DDR designs.
- Flexible DDR Features: Support for CAS latencies 2/2.5/3, multiple burst lengths and both sequential and interleave burst types allows tuning for system performance and access patterns.
- Robust I/O and Timing Alignment: DLL alignment, differential clock inputs and DQS support provide accurate timing for high-reliability data transfers.
- Compact Surface-Mount Package: 144-FBGA footprint delivers high-density integration for space-constrained boards while maintaining a standard ball map for PCB layout.
- Wide Supply Window: 2.375 V–2.625 V VDD/VDDQ range supports system-level power tolerance and stable operation across production variance.
Why Choose M13S128324A-5BIG2M?
The M13S128324A-5BIG2M positions itself as a practical, standards-based DDR SDRAM solution for industrial and embedded applications that require a 1M × 32 organization in a compact FBGA package. Its JEDEC-defined DDR features, supported timing options and DQS/DLL timing alignment simplify integration into existing DDR memory controllers.
Engineers specifying this device will benefit from its industrial temperature rating, RoHS compliance, and the voltage/I/O characteristics documented for reliable board-level deployment, making it a suitable choice for OEMs and system designers targeting robust, JEDEC-compatible DDR memory implementations.
Request a quote or submit an inquiry to obtain pricing, availability and lead-time information for the M13S128324A-5BIG2M.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A