M13S2561616A-4TG2T

The M13S2561616A-4TG2T is a commercial-grade DDR SDRAM device from ESMT featuring a 4M × 16 organization and a nominal 256 Mbit density. It implements a double-data-rate architecture with differential clock inputs and is optimized for parallel memory interfaces in embedded and consumer designs.

Designed for systems that require burst access and flexible latency options, the device supports up to 250 MHz operation (DDR500), JEDEC qualification, and is supplied in a 66-pin TSOPII surface-mount package with a 0 °C to 70 °C operating range.

Key Features

• Core architecture  Double-data-rate operation with DLL alignment, differential CLK/CLK̄ inputs and bi-directional data strobe (DQS) enabling two data transfers per clock cycle.
• Memory organization & size  4M × 16 organization providing the device nominal density; detailed specification lists 268.4 Mbit.
• Performance  Up to 250 MHz clock frequency (DDR500); access time 10 ns and write cycle time (word/page) 15 ns for responsive read/write operations.
• Flexible timing and burst  Supports CAS latency options 2, 2.5, 3 and burst lengths of 2, 4 and 8 with sequential and interleave burst types to match system performance requirements.
• Power & voltage  2.5 V nominal operation with specified supply range of 2.3 V to 2.7 V for VDD and VDDQ; SSTL_2-compatible 2.5 V I/O signalling.
• Refresh & reliability  Auto and self refresh support with a 7.8 µs refresh interval; JEDEC-qualified commercial-grade device.
• Package & mounting  66-pin TSOPII (surface mount) package, suitable for compact board layouts and automated assembly.
• Environment  RoHS-compliant; operating ambient temperature 0 °C to 70 °C.

Typical Applications

• Consumer electronics  Used for system memory in consumer devices that require parallel DDR SDRAM with burst access and modest temperature ranges.
• Embedded systems  Serves as main or buffer memory in embedded platforms that need DDR performance with JEDEC-qualified timing options.
• Networking and communications equipment  Suitable for packet buffering and temporary data storage where parallel DDR memory and SSTL_2 I/O signaling are required.
• Industrial control and instrumentation  Appropriate for commercial-grade industrial designs operating within 0 °C to 70 °C that require reliable refresh and self-refresh modes.

Unique Advantages

• Double-data-rate throughput: Two data transfers per clock cycle provide higher effective bandwidth compared to single-data-rate devices.
• Flexible timing configuration: CAS latency settings (2 / 2.5 / 3) and multiple burst lengths allow tuning for performance or power trade-offs.
• SSTL_2-compatible I/O: 2.5 V I/O signalling simplifies interface design with controllers expecting SSTL_2 levels.
• JEDEC-qualified commercial grade: Documented timing and operational parameters for predictable integration into mainstream designs.
• Compact TSOPII package: 66-pin surface-mount form factor supports space-constrained board layouts and automated assembly processes.
• Power range and refresh support: 2.3 V–2.7 V supply tolerance and auto/self-refresh with a 7.8 µs refresh interval support robust operation in varied system conditions.

Why Choose M13S2561616A-4TG2T?

The M13S2561616A-4TG2T provides a balanced DDR SDRAM solution for designs that need parallel DDR performance, configurable latency and burst behavior, and JEDEC-qualified documentation for predictable system integration. Its 66-pin TSOPII surface-mount package and SSTL_2-compatible I/O make it straightforward to incorporate into compact, board-level applications.

This part suits engineers and procurement teams building commercial-grade embedded, consumer, and communications products that require documented DDR timing, refresh capabilities, and a reliable operating window (0 °C to 70 °C). Backed by ESMT datasheet specifications, it supports practical implementation and validation in production systems.

Request a quote or submit a procurement inquiry to secure M13S2561616A-4TG2T for your next design and get detailed ordering and availability information.