M13S2561616A-5BG2T

The M13S2561616A-5BG2T is a commercial-grade DDR SDRAM organized as 4M × 16 with industry-standard double-data-rate architecture. It delivers two data transfers per clock cycle at a 200 MHz clock (DDR400 operation) and is supplied in a compact 60‑ball BGA surface-mount package.

Designed for commercial electronic systems requiring parallel DDR memory, this device combines DDR timing features, flexible burst modes and CAS latency options with standard 2.5 V I/O signaling and JEDEC qualification for predictable integration into memory subsystems.

Key Features

• Core / Memory Organization 4M × 16 internal organization providing a 256Mbit-class DDR SDRAM (datasheet reports 268.4 Mbit), supporting four internal banks for concurrent bank operations.
• Double-Data-Rate Architecture Two data transfers per clock cycle enable higher throughput; the device supports DDR operation at 200 MHz (DDR400).
• Flexible Timing CAS Latency options of 2, 2.5 and 3 with Burst Lengths of 2, 4 and 8 and selectable burst type (Sequential/Interleave) for tuning performance to system needs.
• Data and Clock Interface Bi-directional data strobes (LDQS/UDQS), differential clock inputs (CLK/CLK) and DLL alignment of DQ/DQS provide robust timing for read/write transfers.
• Performance Parameters Typical access and write cycle times reported at 15 ns and supported clock frequency of 200 MHz.
• Power and Signaling VDD and VDDQ nominally 2.5 V (specified tolerance ±0.2 V); I/O signaling compatible with 2.5 V SSTL_2 levels. Operating supply range listed as 2.3 V to 2.7 V.
• Package and Mounting Surface-mount 60‑ball BGA package (60‑BGA) for compact board-level integration.
• Operating Conditions Commercial-grade operating ambient range from 0 °C to 70 °C and JEDEC qualification per product data.
• Standards & Environmental JEDEC qualification and RoHS compliance are indicated in the product data.

Typical Applications

• Commercial embedded systems — Use as on‑board parallel DDR memory where a 60‑BGA compact footprint and DDR400 throughput are required.
• Consumer electronics (commercial grade) — Suitable for commercial consumer devices that require standard DDR SDRAM organization and signaling.
• Memory subsystems and modules — Integration into memory module designs or multi‑chip arrays using a 60‑ball BGA footprint and JEDEC‑aligned interfaces.

Unique Advantages

• DDR throughput at DDR400 timing — Two transfers per clock combined with 200 MHz operation raise effective data bandwidth without increasing clock rate.
• Flexible timing modes — Multiple CAS latency and burst length options allow designers to optimize for latency or sustained throughput.
• Robust timing controls — Differential clocks and DLL alignment of DQ/DQS improve timing margin for read/write operations.
• Compact surface-mount package — 60‑BGA reduces board area and supports high-density layouts.
• Commercial temperature and JEDEC qualification — Clear operating range (0 °C to 70 °C) and JEDEC qualification simplify qualification for commercial designs.
• RoHS compliant — Conforms to environmental directives as stated in the product data.

Why Choose M13S2561616A-5BG2T?

The M13S2561616A-5BG2T positions itself as a practical DDR SDRAM option for commercial designs that need DDR400-class throughput in a compact 60‑ball BGA package. Its 4M×16 organization, flexible CAS latency and burst settings, and standard 2.5 V I/O signaling enable integration into a wide range of parallel memory subsystems where predictable timing and JEDEC alignment are required.

For engineering teams and procurement sourcing commercial-grade DDR memory, this device offers a balance of performance, configurability and form-factor efficiency backed by documented operating limits and environmental compliance.

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