M13S2561616A-6BG2T

The M13S2561616A-6BG2T is a DDR SDRAM device organized as 4M × 16 for a total of 268.4 Mbit. It implements double-data-rate architecture with differential clock inputs and is offered in a compact 60‑ball BGA surface‑mount package for commercial applications.

Designed for DDR333-class systems, the device provides flexible timing and burst options, SSTL_2‑compatible I/O levels, JEDEC qualification, and RoHS compliance, making it suitable for commercial‑grade memory implementations that require standardized DDR behavior and a 0 °C to 70 °C operating range.

Key Features

• Core Memory Organization — 4M × 16 organization delivering 268.4 Mbit of volatile DRAM storage with four internal banks for concurrent access handling.
• DDR Architecture — Double‑data‑rate transfers with differential clock inputs (CLK/CLK¯) and a DLL to align DQ/DQS transitions with clock edges.
• Data Strobe and I/O — Bi‑directional DQS (LDQS/UDQS) with edge‑aligned reads and center‑aligned writes; data mask (DM) for write masking by byte lane.
• Timing and Burst Options — CAS latency selectable at 2, 2.5, or 3; burst lengths of 2, 4 or 8; sequential and interleave burst types supported. Typical access and write cycle timing: 15 ns.
• Voltage and Interface — VDD / VDDQ nominal 2.5 V (operational range 2.3 V to 2.7 V); 2.5 V I/O compatible with SSTL_2 signaling.
• Refresh and Power Management — 7.8 µs refresh interval with auto and self refresh functionality to maintain data integrity.
• Package and Mounting — Surface‑mount 60‑ball BGA package optimized for board‑level integration and reduced footprint.
• Commercial Qualification & Environmental — JEDEC qualification with commercial operating temperature 0 °C to 70 °C and RoHS compliance.

Typical Applications

• DDR333 system memory — Provides DDR333‑class DRAM capacity and timing for systems designed around a 166 MHz clock rate.
• Board‑level memory expansion — Compact 60‑BGA package for integration where board space and surface‑mount assembly are required.
• Commercial electronics — Targeted for commercial‑grade devices and equipment operating within 0 °C to 70 °C and requiring JEDEC‑level DDR behavior.

Unique Advantages

• DDR333 performance: Double‑data‑rate transfers at a 166 MHz clock provide higher effective data throughput compared to single‑rate DRAM at the same clock.
• Flexible timing: Multiple CAS latency settings (2 / 2.5 / 3) and selectable burst lengths let designers tune performance vs. timing constraints.
• SSTL_2 I/O compatibility: 2.5 V I/O and VREF support enable straightforward interfacing to standard DDR signaling domains.
• Compact package: 60‑ball BGA surface‑mount package simplifies placement on space‑constrained PCBs while supporting reliable solder joints.
• Standards and compliance: JEDEC qualification and RoHS compliance help ensure predictable behavior and environmental compliance in commercial designs.
• Power and refresh management: Auto and self refresh plus a 7.8 µs refresh interval support continuous data retention with controlled power states.

Why Choose M13S2561616A-6BG2T?

The M13S2561616A-6BG2T combines DDR double‑data‑rate architecture, configurable timing, and SSTL_2‑compatible I/O in a compact 60‑BGA package, making it a practical choice for designers implementing DDR333‑class memory in commercial systems. With JEDEC qualification, RoHS compliance, and a defined operating range of 0 °C to 70 °C, it offers a well‑specified memory option for production designs that require standardized DDR behavior and straightforward board‑level integration.

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