M13S2561616A-5TG2T

256Mb DDR SDRAM
Part Description

DDR SDRAM 256Mbit 4Mx16 200MHz 66-TSOPII Commercial

Quantity 1,146 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPIIMemory FormatDRAMTechnologyDRAM
Memory Size256 MbitAccess Time15 nsGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page15 nsPackaging66-TSOPII
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.24

Overview of M13S2561616A-5TG2T – DDR SDRAM 256Mbit 4Mx16 200MHz 66-TSOPII Commercial

The M13S2561616A-5TG2T is a commercial-grade DDR SDRAM organized as 4M × 16 providing 268.4 Mbit of volatile DRAM memory. It implements a double-data-rate architecture with differential clock inputs and a DLL to align data timing, delivering parallel DDR memory operation at a 200 MHz clock frequency.

Designed for surface-mount integration in a 66-pin TSOPII package, this JEDEC-qualified device targets commercial applications that require standard DDR interface behavior, selectable CAS latencies, and standard DDR features such as bi-directional DQS, auto/self refresh, and SSTL_2-compatible I/O levels.

Key Features

  • Memory Organization & Capacity — 268.4 Mbit total organized as 4M × 16 with four internal banks to support efficient burst and banked access.
  • DDR Architecture & Timing — Double-data-rate transfers (two data transfers per clock) with CAS latency options of 2, 2.5, and 3 and burst lengths of 2, 4, and 8.
  • Data Path & Timing Alignment — Bi-directional data strobe (LDQS/UDQS) with DQS edge alignment for reads and center-alignment for writes; internal DLL aligns DQ/DQS to CLK transitions.
  • Clock & Control — Differential clock inputs (CLK and CLK¯), clock enable (CKE), and standard control pins (RAS, CAS, WE, CS) for conventional DDR control.
  • Performance Parameters — Rated for 200 MHz clock frequency with specified access time and write cycle time (15 ns).
  • Power & I/O — VDD and VDDQ nominal 2.5 V (±0.2 V) with operating supply range 2.3 V to 2.7 V; SSTL_2-compatible 2.5 V I/O signaling and data mask (DM) for write masking.
  • Refresh & Reliability — 7.8 μs refresh interval with Auto and Self Refresh support; JEDEC qualification for standard DDR implementations.
  • Package & Mounting — Surface-mount 66-pin TSOPII package (66-TSOPII) suited for PCB-mounted memory designs; operating ambient temperature 0 °C to 70 °C.
  • Compliance — RoHS compliant.

Typical Applications

  • Commercial embedded systems — Provides parallel DDR memory for general-purpose embedded platforms that require JEDEC-standard DDR operation at 200 MHz.
  • PCB-level memory expansion — Surface-mount 66-TSOPII package enables straightforward integration as onboard DRAM in space-constrained designs.
  • Consumer electronic modules — Suitable for commercial consumer devices requiring standard DDR buffering and burst-capable memory interfaces.

Unique Advantages

  • Standard DDR timing flexibility — Selectable CAS latencies (2 / 2.5 / 3) and multiple burst lengths support a range of timing and throughput trade-offs.
  • Robust data alignment — DLL and DQS alignment features simplify timing closure by aligning data and strobe transitions with CLK.
  • SSTL_2-compatible I/O — 2.5 V I/O levels with separate VDDQ support enable compatibility with standard SSTL_2 memory interfaces.
  • JEDEC-qualified design — Adheres to standard DDR SDRAM operational modes and refresh requirements for predictable behavior in standard systems.
  • Compact SMT packaging — 66-TSOPII surface-mount package facilitates high-density board layouts while maintaining industry-standard pin-out.
  • Regulatory compliance — RoHS compliance supports environmental and manufacturing requirements for commercial products.

Why Choose M13S2561616A-5TG2T?

The M13S2561616A-5TG2T positions itself as a JEDEC-compliant DDR SDRAM option for commercial designs that need a 4M × 16 memory organization at a 200 MHz DDR clock. Its combination of DLL-based timing alignment, bi-directional DQS, selectable CAS latencies, and SSTL_2-compatible I/O provides predictable timing behavior and integration simplicity for PCB-mounted memory subsystems.

This device is well suited to designers and procurement teams building commercial embedded and consumer-class systems that require standardized DDR operation, a compact 66-TSOPII surface-mount footprint, and RoHS compliance for manufacturing and regulatory alignment.

Request a quote or submit an inquiry to receive pricing, lead-time, and availability information for the M13S2561616A-5TG2T DDR SDRAM. Our team can provide technical details and support to help integrate this JEDEC-qualified DDR device into your design.

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