M13S2561616A-5BIG2T

The M13S2561616A-5BIG2T is a 256 Mbit DDR SDRAM organized as 4M × 16 with a 200 MHz core clock (DDR400). It implements double-data-rate architecture with bi-directional data strobe (DQS), a delay-locked loop (DLL) for timing alignment, and four-bank operation for efficient burst transfers.

Designed for industrial-grade systems, this surface-mount 60-ball BGA device supports a wide operating temperature range and JEDEC qualification, making it suitable for embedded applications that require high-speed volatile memory and robust environmental performance.

Key Features

• Memory Organization — 268.4 Mbit total capacity arranged as 4M × 16 with 4 internal banks for burst and interleave operations.
• DDR Architecture — Double-data-rate operation provides two data transfers per clock cycle; DQ transitions on both edges of the data strobe (DQS).
• Clock and Timing — Differential clock inputs (CLK and CLKB) with DLL alignment; supported CAS latencies of 2, 2.5 and 3 and burst lengths of 2, 4 and 8.
• Performance — 200 MHz clock frequency with access and write cycle times specified at 15 ns.
• Power and I/O — VDD and VDDQ nominal 2.5 V (±0.2 V); I/O compatible with SSTL_2 signaling and VREF reference for SSTL_2 operation. Supplier data lists operating supply range 2.3 V to 2.7 V.
• Reliability and Refresh — Auto and self-refresh supported with a 7.8 µs refresh interval to maintain data integrity during operation.
• Package and Mounting — Compact 60-ball BGA package for surface-mount assembly (BGA60, 8 mm × 13 mm × 1.0 mm body, 0.8 mm ball pitch).
• Industrial Grade — JEDEC-qualified device with specified operating temperature range of −40 °C to +85 °C and RoHS compliance.

Typical Applications

• Industrial Control & Automation — High-speed volatile memory for buffering and data logging in controllers and PLCs operating across industrial temperature ranges.
• Embedded Systems — Local DRAM for embedded processors and FPGAs requiring DDR interface memory and compact BGA footprint.
• Communications Equipment — Temporary data storage and packet buffering where DDR performance and SSTL_2 signaling are required.

Unique Advantages

• Industrial temperature rating — Specified to operate from −40 °C to +85 °C, enabling deployment in temperature-challenging environments.
• DDR performance with flexible timing — CAS latencies (2, 2.5, 3) and selectable burst lengths provide timing flexibility to match system performance targets.
• SSTL_2-compatible I/O — 2.5 V I/O with VREF support simplifies integration with SSTL_2 interfaces on many memory controllers and FPGAs.
• Compact BGA footprint — 60-ball BGA package reduces PCB area while supporting high-density surface-mount assemblies.
• JEDEC qualification and RoHS compliant — Industry-standard qualification and environmental compliance for predictable sourcing and lifecycle management.
• Robust refresh and control features — Auto/self-refresh and four-bank architecture support sustained operation and efficient burst transfers.

Why Choose M13S2561616A-5BIG2T?

The M13S2561616A-5BIG2T delivers DDR SDRAM performance in a compact, industrial-grade package suitable for embedded and communications designs that require reliable high-speed volatile memory. With 4M × 16 organization, SSTL_2-compatible I/O, selectable CAS latencies, and JEDEC qualification, it provides a balanced combination of performance, timing flexibility, and environmental robustness for medium-density DRAM needs.

Engineers designing industrial controllers, embedded platforms, and networking equipment can leverage this device to meet thermal and signaling requirements while minimizing board space with the 60-BGA package. Backed by ESMT documentation and product support, the part is positioned for applications where predictable DDR behavior and industrial operating range are required.

Request a quote or submit an inquiry to obtain pricing, lead time and sample availability for the M13S2561616A-5BIG2T. Our team can provide technical datasheets and ordering information to support your design and procurement process.