M13S2561616A-4TIG2T

The M13S2561616A-4TIG2T is an industrial-grade DDR SDRAM device from ESMT offering a 4M × 16 memory organization and a 250 MHz clock rate. It implements a double-data-rate architecture with four internal banks and features required for synchronous burst transfers and low-latency system memory.

Designed for industrial applications, this JEDEC-qualified, RoHS-compliant memory device provides a wide operating temperature range and a surface-mount 66‑TSOPII package suited to space-constrained board designs requiring 2.5V-class DDR operation.

Key Features

• Memory Core  4M × 16 organization providing a 268.4 Mbit capacity with four internal banks for interleaved access and burst transfers.
• DDR Architecture  Double-data-rate operation—two data transfers per clock cycle—supported by bi-directional data strobe (DQS) and a DLL to align DQ/DQS with CLK.
• Performance  Rated for a 250 MHz clock frequency (DDR500), with typical access time listed as 10 ns and write cycle time (word/page) of 15 ns.
• Flexible Timing  Supports CAS latencies 2, 2.5, and 3, with burst lengths of 2, 4 and 8 and both sequential and interleave burst types.
• Interface & Signal Integrity  Differential clock inputs (CLK and /CLK), edge-aligned/center-aligned DQS behavior for reads/writes, and SSTL_2-compatible 2.5V I/O signaling.
• Power and Voltage  VDD and VDDQ nominal 2.5V (±0.2V); overall supply range listed as 2.3V–2.7V in product specifications.
• Refresh and Self-Maintenance  7.8 µs refresh interval with Auto and Self Refresh support to maintain data integrity.
• Industrial Temperature & Qualification  Operating temperature −40°C to +85°C and JEDEC qualification; RoHS‑compliant.
• Package & Mounting  66‑pin TSOPII surface-mount package (66‑TSOPII), suitable for compact board layouts.

Typical Applications

• Industrial Systems  For designs requiring JEDEC‑qualified DDR memory and reliable operation across −40°C to +85°C.
• SSTL_2 I/O Designs  For systems using 2.5V I/O signaling where SSTL_2 compatibility and differential clocking are required.
• Surface-Mount Board Designs  Appropriate for space-constrained PCBs that utilize a 66‑TSOPII surface-mount memory footprint.

Unique Advantages

• Industrial temperature range: Ensures operation from −40°C to +85°C for deployments in harsh environments.
• JEDEC-qualified DDR behavior: Provides standard DDR timing modes (CAS 2/2.5/3) and burst options for predictable system integration.
• SSTL_2-compatible I/O: 2.5V I/O signaling (VDD/VDDQ = 2.5V ±0.2V) simplifies integration with SSTL_2 memory controllers.
• Compact surface-mount package: 66‑TSOPII package supports high-density board layouts while maintaining full DDR feature set.
• Built-in refresh support: Auto and Self Refresh with a 7.8 µs refresh interval reduce system management overhead.
• High transfer rate: 250 MHz clock enables double-data-rate transfers for increased throughput in memory‑intensive tasks.

Why Choose M13S2561616A-4TIG2T?

The M13S2561616A-4TIG2T delivers JEDEC‑qualified DDR functionality in an industrial‑grade package, combining 250 MHz DDR operation with a wide −40°C to +85°C operating range and RoHS compliance. Its 4M × 16 organization, DLL-aligned data strobes, and flexible CAS/burst options make it suitable for designs that require predictable DDR timing and robust signal integrity.

This part is aimed at engineers and procurement teams building industrial and SSTL_2 I/O systems who need a compact, surface-mount DDR solution with standard DDR features, on‑chip refresh modes, and documented electrical/behavioral characteristics for straightforward integration and long-term reliability.

Request a quote or submit an inquiry to receive pricing, availability, and ordering information for the M13S2561616A-4TIG2T. Our team can provide lead‑time details and support for volume requirements.