M13S2561616A-5TIG2T

The M13S2561616A-5TIG2T is an industrial-grade DDR SDRAM device from ESMT configured as 4M × 16 with a total memory size of 268.4 Mbit. It implements double-data-rate architecture with four internal banks and differential clock inputs for high-throughput parallel memory interfaces.

Designed for industrial embedded systems and telecom/communications equipment, this part provides 200 MHz clock operation (DDR400), JEDEC qualification, a wide operating temperature range of -40°C to 85°C, and a 66-pin TSOPII surface-mount package for standard board assembly.

Key Features

• Memory Core & Organization 4M × 16 organization (four banks) delivering 268.4 Mbit of volatile DRAM storage with parallel DDR interface.
• DDR Performance Double-data-rate architecture with two data transfers per clock cycle and a maximum clock frequency of 200 MHz (DDR400).
• Latency & Burst Supports CAS latencies 2, 2.5, and 3, with burst lengths of 2, 4, and 8 and both sequential and interleave burst types.
• Data Path & Timing Bi-directional data strobe (DQS) with edge alignment for reads and center alignment for writes; DLL aligns DQ/DQS to CLK transitions.
• Timing Characteristics Access time and write cycle (word/page) specified at 15 ns for predictable timing behavior in system designs.
• Power and I/O Nominal VDD/VDDQ operation at 2.5 V ±0.2 V (specified supply range 2.3 V–2.7 V) with SSTL_2-compatible 2.5 V I/O signaling.
• Refresh & Reliability 7.8 µs refresh interval with support for auto and self-refresh modes to maintain data integrity.
• Package & Mounting 66-pin TSOPII (surface mount) package (400 mil × 875 mil body, 0.65 mm pin pitch) for standard SMT assembly.
• Industrial Qualification JEDEC-qualified device with operating temperature range of -40°C to 85°C and RoHS compliance.

Typical Applications

• Industrial Control Used as working memory in embedded controllers and PLCs where wide temperature operation and JEDEC qualification are required.
• Networking & Telecom Suitable for buffering and packet memory in communication modules that require DDR throughput and reliable refresh handling.
• Instrumentation & Test Equipment Provides fast parallel memory for data acquisition and real-time processing in industrial test systems.

Unique Advantages

• Industrial Temperature Range: Rated for -40°C to 85°C to meet the environmental needs of industrial and harsh-environment applications.
• JEDEC Qualification: Industry-standard qualification ensures predictable behavior and easier integration into compliant system designs.
• DDR400 Performance at 200 MHz: Double-data-rate operation with 200 MHz clocking provides elevated data throughput for parallel memory interfaces.
• SSTL_2-Compatible I/O: 2.5 V I/O signaling (VDDQ) compatible with SSTL_2 standards for straightforward interface implementation.
• Surface-Mount TSOPII Package: 66-pin TSOPII surface-mount package supports standard PCB assembly processes and dense board layouts.
• Built-in Data Timing Features: Bi-directional DQS, DLL alignment, and selectable CAS latencies/burst lengths provide flexible timing control for system designers.

Why Choose M13S2561616A-5TIG2T?

The M13S2561616A-5TIG2T balances DDR throughput, JEDEC-based reliability, and industrial-grade thermal tolerance in a compact 66-pin TSOPII package. Its 4M × 16 organization, selectable CAS latencies, and standard 2.5 V I/O make it suitable for embedded systems, networking modules, and instrumentation that require dependable parallel DDR memory.

Designed and manufactured by ESMT, this DDR SDRAM part offers predictable timing (15 ns access/write-cycle figures), refresh management, and RoHS compliance—features that support long-term deployment and straightforward integration into industrial designs.

Request a quote or submit an inquiry to obtain pricing, availability, and order details for M13S2561616A-5TIG2T. Our team can provide lead-time and ordering information to support your design and production planning.